Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED, CPM |
2017-05-25 13:30 |
Aichi |
VBL, Nagoya University |
Fabrication and characterization of flexible organic thin film solar cells for indoor light harvesting Yusuke Kawamatsu, Mizuki Ito, Shinya Kato, Tetsuo Soga, Naoki Kishi (NITech) ED2017-15 CPM2017-1 SDM2017-9 |
Flexible organic solar cells for indoor light harvesting toward an individual power supply in IoT technology have been e... [more] |
ED2017-15 CPM2017-1 SDM2017-9 pp.1-5 |
SDM, ED, CPM |
2017-05-25 13:55 |
Aichi |
VBL, Nagoya University |
Study on thermal evaporation of tin sulfide films in vacuum Yasushi Takano, Yukio Suganuma (Shizuoka Univ.) ED2017-16 CPM2017-2 SDM2017-10 |
[more] |
ED2017-16 CPM2017-2 SDM2017-10 pp.7-10 |
SDM, ED, CPM |
2017-05-25 14:20 |
Aichi |
VBL, Nagoya University |
Fabrication of NiO thin film by electrochemical deposition Miki Koyama, Masaya Ichimura (NITech) ED2017-17 CPM2017-3 SDM2017-11 |
[more] |
ED2017-17 CPM2017-3 SDM2017-11 pp.11-16 |
SDM, ED, CPM |
2017-05-25 14:45 |
Aichi |
VBL, Nagoya University |
Fabrication of n-type AlOx thin films by drop photochemical deposition Masanari Umemura, Masaya Ichimura (NITech) ED2017-18 CPM2017-4 SDM2017-12 |
AlOx is transparent for visible rays because of its large bandgap, and stable chemically and thermally. We fabricated Al... [more] |
ED2017-18 CPM2017-4 SDM2017-12 pp.17-22 |
SDM, ED, CPM |
2017-05-25 15:25 |
Aichi |
VBL, Nagoya University |
Electrochemical deposition of Cu-doped p-type Fe-O thin films Satoshi Kobayashi, Masaya Ichimura (NITech) ED2017-19 CPM2017-5 SDM2017-13 |
[more] |
ED2017-19 CPM2017-5 SDM2017-13 pp.23-28 |
SDM, ED, CPM |
2017-05-25 15:50 |
Aichi |
VBL, Nagoya University |
Development of Plasmonic Logical Circuit Using Multimode Interference Ryo Watanabe, Masashi Ota, Yudai Kikuchi, Tomohiro Hirano, Yuya Ishii, Mitsuo Fukuda (TUT) ED2017-20 CPM2017-6 SDM2017-14 |
Logic circuits using Surface Plasmon Polaritons(SPPs) as signal carriers have been attracting attentions. Recently, we h... [more] |
ED2017-20 CPM2017-6 SDM2017-14 pp.29-32 |
SDM, ED, CPM |
2017-05-25 16:15 |
Aichi |
VBL, Nagoya University |
Development of plasmonic retention circuit using bow-tied metallic waveguide Takahiro Furuki, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT) ED2017-21 CPM2017-7 SDM2017-15 |
We have numerically demonstrated a plasmonic temporary retention circuit using short range surface plasmon polaritons (S... [more] |
ED2017-21 CPM2017-7 SDM2017-15 pp.33-37 |
SDM, ED, CPM |
2017-05-25 16:40 |
Aichi |
VBL, Nagoya University |
Development of plasmonic multiplexer/demultiplexer and inverter Kotaro Nakayama, Asahi Sumimura, Yuta Tonooka, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT) ED2017-22 CPM2017-8 SDM2017-16 |
Optoelectronic integrated circuits using surface plasmon polaritons (SPPs) as signal carriers have been attracting atten... [more] |
ED2017-22 CPM2017-8 SDM2017-16 pp.39-44 |
SDM, ED, CPM |
2017-05-26 09:30 |
Aichi |
VBL, Nagoya University |
Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama) ED2017-23 CPM2017-9 SDM2017-17 |
[more] |
ED2017-23 CPM2017-9 SDM2017-17 pp.45-49 |
SDM, ED, CPM |
2017-05-26 09:55 |
Aichi |
VBL, Nagoya University |
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18 |
Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] |
ED2017-24 CPM2017-10 SDM2017-18 pp.51-54 |
SDM, ED, CPM |
2017-05-26 10:20 |
Aichi |
VBL, Nagoya University |
Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19 |
[more] |
ED2017-25 CPM2017-11 SDM2017-19 pp.55-58 |
SDM, ED, CPM |
2017-05-26 10:45 |
Aichi |
VBL, Nagoya University |
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] |
ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
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