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Technical Committee on Silicon Device and Materials (SDM)  (Searched in: 2017)

Search Results: Keywords 'from:2017-05-25 to:2017-05-25'
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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 12 of 12  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2017-05-25
13:30		 Aichi VBL, Nagoya University Fabrication and characterization of flexible organic thin film solar cells for indoor light harvesting
Yusuke Kawamatsu, Mizuki Ito, Shinya Kato, Tetsuo Soga, Naoki Kishi (NITech) ED2017-15 CPM2017-1 SDM2017-9		 Flexible organic solar cells for indoor light harvesting toward an individual power supply in IoT technology have been e... [more] ED2017-15 CPM2017-1 SDM2017-9
pp.1-5
SDM, ED, CPM 2017-05-25
13:55		 Aichi VBL, Nagoya University Study on thermal evaporation of tin sulfide films in vacuum
Yasushi Takano, Yukio Suganuma (Shizuoka Univ.) ED2017-16 CPM2017-2 SDM2017-10		  [more] ED2017-16 CPM2017-2 SDM2017-10
pp.7-10
SDM, ED, CPM 2017-05-25
14:20		 Aichi VBL, Nagoya University Fabrication of NiO thin film by electrochemical deposition
Miki Koyama, Masaya Ichimura (NITech) ED2017-17 CPM2017-3 SDM2017-11		  [more] ED2017-17 CPM2017-3 SDM2017-11
pp.11-16
SDM, ED, CPM 2017-05-25
14:45		 Aichi VBL, Nagoya University Fabrication of n-type AlOx thin films by drop photochemical deposition
Masanari Umemura, Masaya Ichimura (NITech) ED2017-18 CPM2017-4 SDM2017-12		 AlOx is transparent for visible rays because of its large bandgap, and stable chemically and thermally. We fabricated Al... [more] ED2017-18 CPM2017-4 SDM2017-12
pp.17-22
SDM, ED, CPM 2017-05-25
15:25		 Aichi VBL, Nagoya University Electrochemical deposition of Cu-doped p-type Fe-O thin films
Satoshi Kobayashi, Masaya Ichimura (NITech) ED2017-19 CPM2017-5 SDM2017-13		  [more] ED2017-19 CPM2017-5 SDM2017-13
pp.23-28
SDM, ED, CPM 2017-05-25
15:50		 Aichi VBL, Nagoya University Development of Plasmonic Logical Circuit Using Multimode Interference
Ryo Watanabe, Masashi Ota, Yudai Kikuchi, Tomohiro Hirano, Yuya Ishii, Mitsuo Fukuda (TUT) ED2017-20 CPM2017-6 SDM2017-14		 Logic circuits using Surface Plasmon Polaritons(SPPs) as signal carriers have been attracting attentions. Recently, we h... [more] ED2017-20 CPM2017-6 SDM2017-14
pp.29-32
SDM, ED, CPM 2017-05-25
16:15		 Aichi VBL, Nagoya University Development of plasmonic retention circuit using bow-tied metallic waveguide
Takahiro Furuki, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT) ED2017-21 CPM2017-7 SDM2017-15		 We have numerically demonstrated a plasmonic temporary retention circuit using short range surface plasmon polaritons (S... [more] ED2017-21 CPM2017-7 SDM2017-15
pp.33-37
SDM, ED, CPM 2017-05-25
16:40		 Aichi VBL, Nagoya University Development of plasmonic multiplexer/demultiplexer and inverter
Kotaro Nakayama, Asahi Sumimura, Yuta Tonooka, Masashi Ota, Yuya Ishii, Mitsuo Fukuda (TUT) ED2017-22 CPM2017-8 SDM2017-16		 Optoelectronic integrated circuits using surface plasmon polaritons (SPPs) as signal carriers have been attracting atten... [more] ED2017-22 CPM2017-8 SDM2017-16
pp.39-44
SDM, ED, CPM 2017-05-26
09:30		 Aichi VBL, Nagoya University Heteroepitaxial Growth of InGaSb Thin Films on GaSb/Si(111)-√3×√3-Ga Surface Phase
Md.Monzur-ul-akhir, Masayuki Mori, Hiroya Shimoyama, Koichi Maezawa (Univ. of Toyama) ED2017-23 CPM2017-9 SDM2017-17		  [more] ED2017-23 CPM2017-9 SDM2017-17
pp.45-49
SDM, ED, CPM 2017-05-26
09:55		 Aichi VBL, Nagoya University Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18		 Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photoca... [more] ED2017-24 CPM2017-10 SDM2017-18
pp.51-54
SDM, ED, CPM 2017-05-26
10:20		 Aichi VBL, Nagoya University Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19		  [more] ED2017-25 CPM2017-11 SDM2017-19
pp.55-58
SDM, ED, CPM 2017-05-26
10:45		 Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20		 An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
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