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| Chair |
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Seiya Sakai (Hokkaido Univ.) |
| Vice Chair |
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Manabu Arai (Nagoya Univ.) |
| Secretary |
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Masatoshi Koyama (Osaka Inst. of Tech.), Yoshitugu Yamamoto (Mitsubishi Electric) |
| Assistant |
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Toshiyuki Kawaharamura (Kochi Univ. of Tech.), Tomohiro Yoshida (SUMITOMO ELECTRIC DEVICE INNOVATIONS) |
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| Chair |
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Hideki Nakazawa (Hirosaki Univ.) |
| Vice Chair |
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Tomoaki Terasako (Ehime Univ.) |
| Secretary |
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Noriko Bamba (Shinshu Univ.), Mayumi Takeyama (Kitami Inst. of Tech) |
| Assistant |
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Yasuo Kimura (Tokyo Univ. of Tech.), Fumihiko Hirose (Yamagata Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.), AHMMAD ARIMA BASHIR (Yamagata Univ.) |
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| Chair |
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Atsushi Yamaguchi (Kanazawa Inst. of Tech.) |
| Vice Chair |
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Hiroyuki Ishii (Furukawa Electric) |
| Secretary |
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Keita Mochiduki (Yokohama National Univ.), Yoshiaki Nishijima (Yokohama National Univ.) |
| Assistant |
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Atsushi Matsumoto (NICT) |
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| Conference Date |
Thu, Nov 28, 2024 13:00 - 17:20
Fri, Nov 29, 2024 10:00 - 16:50 |
| Topics |
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| Conference Place |
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| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on ED, CPM, LQE. |
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13:00-13:05 |
( 5 min. ) |
Thu, Nov 28 PM
13:05 - 14:20 |
| (1) |
13:05-13:30 |
Optical gain study of HVPE-AlN substrates by variable stripe length method |
Ryota Ishii, Nagato Sumita (Kyoto Univ.), Tatsuya Hitomi, Reo Yamamoto, Toru Nagashima (Tokuyama), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (2) |
13:30-13:55 |
Carrier and phonon dynamics in quantum wells |
Masaya Chizaki, Yoshihiro Ishitani (Chiba Univ.) |
| (3) |
13:55-14:20 |
Strain relaxation and surface recombination in InGaN based nanopillars |
Takao Oto, Shunya Kosuge (Yamagata Univ.), Takeki Aikawa, Umito Kurabe, Akihiko Kikuchi (Sophia Univ.) |
| |
14:20-14:30 |
Break ( 10 min. ) |
Thu, Nov 28 PM
14:30 - 15:45 |
| (4) |
14:30-14:55 |
Microscopic EL imaging measurements of deep-ultraviolet AlGaN LEDs grown on sputter-annealed AlN |
R.Tsujimoto (Osaka Univ.), S.Ichikawa (Osaka Univ./Research Center for UHVEM, Osaka Univ.), R.Akaike, K.Uesugi, T.Nakamura, H.Miyake (Mie Univ.), K.Kojima (Osaka Univ.) |
| (5) |
14:55-15:20 |
Improvement of MQW layer and p-GaN contact layer of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system |
Tomoki Kojimai, Soutarou Ishida, Takashi Egawa, Makoto Miyoshi (NIT) |
| (6) |
15:20-15:45 |
Significant Enhancement of Yellow-Green Emissions from InGaN/GaN Quantum Wells Using Metallic Nanostructures and Dielectric Thin Films |
Koichi Okamoto, Naoki Ueda, Kosuke Fujioka, Kenta Mitoda, Tetsuya Matsuyama, Kenji Wada (Osaka Metropolitan Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
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15:45-15:55 |
Break ( 10 min. ) |
Thu, Nov 28 PM
16:05 - 17:20 |
| (7) |
16:05-16:30 |
A study on the carrier dynamics in InGaN quantum-well systems with different well numbers |
Itsuki Shimbo, Hiroki Tosa, Shoki Jinno, Keito Mori-Tamamura, Atsushi A. Yamaguchi (KIT), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST) |
| (8) |
16:30-16:55 |
A study on the carrier dynamics in InGaN quantum-well systems with different alloy compositions |
Yamagata Ririka, Itsuki Shimbo, Keito Mori-Tamamura, Atsushi A. Yamaguchi (kanazawa Inst. Tech.), Kazunori Iwamitsu, Shigetaka Tomiya (NAIST) |
| (9) |
16:55-17:20 |
Carrier diffusion processes in InGaN quantum wells measured by time-resolved PL measurements |
Osuke Ito, Atsushi A. Yamaguchi (Kanazawa Inst. Tech.), Maiko Ito, Rintaro Koda, Tatsushi Hamaguchi (Sony Semiconductor Solutions Corp.) |
Fri, Nov 29 AM
10:00 - 10:50 |
| (10) |
10:00-10:25 |
Z-scheme SnS2/g-C3N4 heterojunction thin films for photocatalytic applications |
Yohei Mori, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ.) |
| (11) |
10:25-10:50 |
Properties of nickel hydroxide thin films as a semiconductor |
Koji Abe (Nitech) |
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10:50-11:00 |
Break ( 10 min. ) |
Fri, Nov 29 AM
11:00 - 11:50 |
| (12) |
11:00-11:25 |
Neuromorphic Device Application of PEDOT:PSS/ZnO Nanorods /ZnO:Ga Heterostructures
-- Device Fabrication and Current-Voltage Properties -- |
Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol, Kagawa Col.), Rajasekaran Palani, Tetsuya Yamamoto (Kochi Univ. Technol.) |
| (13) |
11:25-11:50 |
Neuromorphic Device Application of PEDOT:PSS/ZnO Nanorods /ZnO:Ga Heterostructures
-- Pulse Operation Properties -- |
Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Rajasekaran Palani, Tetsuya Yamamoto (Kochi Univ. Technol.) |
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11:50-13:30 |
Break ( 100 min. ) |
Fri, Nov 29 PM
13:30 - 14:45 |
| (14) |
13:30-13:55 |
A Screening Test of GaN-HEMTs for Improvement of Breakdown Voltage Uniformity |
Wataru Saito, Shin-ichi Nishizawa (Kyushu Uni.) |
| (15) |
13:55-14:20 |
Fabrication and device characteristics estimation of AlGaN/GaN CAVETs on Si substrates with strained layer superlattice as current blocking layer and δ-doped conductive buffer layer |
Toshiharu Kubo, Ryutaro Miki, Takashi Egawa (NITech) |
| (16) |
14:20-14:45 |
Comparison of properties of ALGaN/GaN HEMT structures on Si substrates with strained layer superlattice and graded ALGaN layer as buffer layer |
Ryutaro Miki, Toshiharu Kubo, Takashi Egawa (NIT) |
| |
14:45-14:55 |
Break ( 10 min. ) |
Fri, Nov 29 PM
14:55 - 15:45 |
| (17) |
14:55-15:20 |
Two-dimensional characterization of the GaN JBS structure by scanning internal photoemission microscopy |
Hiroki Imabayashi, Haruto Yoshimura (Univ. of Fukui), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) |
| (18) |
15:20-15:45 |
Device fabrication and characterization of GaN HBTs with a p-type base region based-on GaInN/GaN MQW structures |
Ryosei Inoue, Tomoki Kojima, Akira Mase, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) |
| |
15:45-15:55 |
Break ( 10 min. ) |
Fri, Nov 29 PM
15:55 - 16:50 |
| (19) |
15:55-16:20 |
Mist chemical vapor deposited gate dielectrics for GaN-based MOS device |
Zenji Yatabe, Masaya Fukumitsu, Hiroshi Otake, Takumi Hirakura, Hadirah Radzuan (Kumamoto Univ.), Ryota Ochi (Hokkaido Univ.), Yusui Nakamura (Kumamoto Univ.), Taketomo Sato (Hokkaido Univ.) |
| (20) |
16:20-16:45 |
Defect Reduction of ALD-Al2O3-based Insulated-gate Structure for InP-based HEMT with H2O Vapor |
Shiro Ozaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) |
| |
16:45-16:50 |
( 5 min. ) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Devices (ED) [Latest Schedule]
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| Contact Address |
Yoshitsugu Yamamoto (Mitsubishi Electric Corp.)
TEL: 06-6496-9660
E- : Ya    Yo  gu  MibiElect c
Masatoshi Koyama (Osaka Inst. of Tech. ）
TEL : 06-6167-4810
E- :   oit |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
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| Contact Address |
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| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
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| Contact Address |
Shinsuke Tanaka (Fujitsu)
TEL +080-2203-4544
E-: n-     
Yoshiaki Nishijima (Yokohama national univ.)
TEL +045-339-4107
E-:  y |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html |
Last modified: 2024-09-20 18:10:57
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