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| Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Vice Chair |
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Tatsuya Usami (Rapidus) |
| Secretary |
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Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) |
| Assistant |
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Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital) |
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| Conference Date |
Wed, Jan 31, 2024 12:30 - 16:20 |
| Topics |
Advanced semiconductor devices and processes (Special feature on IEDM) |
| Conference Place |
KIT Toranomon Graduate School |
| Address |
Atago Toyo Bldg. Rm1301(13F) 1-3-4 Atago, Minato-ku, Tokyo 105-0002 Japan |
| Transportation Guide |
https://www.kanazawa-it.ac.jp/tokyo/map.htm |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Wed, Jan 31 PM
12:30 - 16:20 |
| |
12:30-12:35 |
Opening Address ( 5 min. ) |
| (1) |
12:35-13:05 |
[Invited Talk]
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs  SDM2023-74 |
Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST) |
| (2) |
13:05-13:35 |
[Invited Talk]
Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition SDM2023-75 |
Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) |
| (3) |
13:35-14:05 |
[Invited Talk]
CMOS Directly Bonded to Array (CBA) Technology for Future 3D Flash Memory SDM2023-76 |
Masayoshi Tagami (KIOXIA) |
| (4) |
14:05-14:35 |
[Invited Talk]
High Peformance 3D Flash Memory with 3.2Gbps Interface and 205MB/s Program Throughput based on CBA(CMOS Directly Bonded to Array) Technology SDM2023-77 |
Shigeki Kobayashi, , , , , (KIOXIA), , , , , , , , , , , , (KIOXIA) |
| |
14:35-14:50 |
Break ( 15 min. ) |
| (5) |
14:50-15:20 |
[Invited Talk]
Endurance Improvement of HfO-FeFET by Controlled Charge Trapping SDM2023-78 |
Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura, Reika Ichihara, Kazuhiro Matsuo, Daisuke Hagishima, Makoto Fujiwara, Masumi Saitoh (KIOXIA) |
| (6) |
15:20-15:50 |
[Invited Talk]
A highly reliable 1.8 V 1 Mb Hf0.5Zr0.5O2-based 1T1C FeRAM Array with 3-D Capacitors
-- Report on IEDM2023 -- SDM2023-79 |
Jun Okuno, Takafumi Kunihiro, Yusuke Shuto, Tsubasa Yonai, Ryo Ono (Sony Semiconductor Solutions Corp.), Ruben Alcala (NaMLab), Maximilian Lederer, Konrad Seidel (Fraunhofer IPMS), Thomas Mikolajick, Uwe Schroeder (NaMLab), Taku Umebayashi (Sony Semiconductor Solutions Corp.) |
| (7) |
15:50-16:20 |
[Invited Talk]
Physical Reservoir Computing using HZO-based FeFETs for Edge-AI Applications SDM2023-80 |
Shin-ichi Takagi, Kasidit Toprasertpong, Eishin Nkako, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane (The Univ. of Tokyo) |
| Announcement for Speakers |
| Invited Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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| Contact Address |
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Last modified: 2023-11-27 18:28:26
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