| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
Technical Committee on Microwaves (MW) (Searched in: 2009)
Search Results: Keywords 'from:2010-01-13 to:2010-01-13'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2010-01-13 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Design of a Compact UWB Bandpass Filter Using a Microstrip Five-Mode Step-Impedance Resonator Akihito Beppu, Zhewang Ma (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)  ED2009-174 MW2009-157 |
n this paper, an ultra-wideband (UWB) bandpass filter using microstrip five-mode step-impedance resonator is proposed, a... [more] | ED2009-174 MW2009-157 pp.1-6 |
| ED, MW | 2010-01-13 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | BIT Line Filter Consisting of FR-4 Substrate at 30GHz Yusuke Omote, Futoshi Kuroki (KNCT) ED2009-175 MW2009-158 |
[more] | ED2009-175 MW2009-158 pp.7-10 |
| ED, MW | 2010-01-13 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Evaluation of the phase disaplacement delta by the complex permittivity measuring with resonators Jun-ichi Sugiyama (AIST) ED2009-176 MW2009-159 |
TM0n0 mode cylindrical cavity resonator which can change the temperature of the sample is created for measuring the rela... [more] | ED2009-176 MW2009-159 pp.11-16 |
| ED, MW | 2010-01-13 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Wide-band spurious-response suppression using 4-pole coplanar-waveguide resonator filters Takahiro Nagafuku, Hiroyuki Deguchi, Mikio Tsuji (Doshisha Univ.), Hirotaka Fujita (SHARP) ED2009-177 MW2009-160 |
(To be available after the conference date) [more] | ED2009-177 MW2009-160 pp.17-21 |
| ED, MW | 2010-01-13 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | An All-Pass/Capacitive-Coupled BPF MMIC Phase Shifter Ryota Komaru, Masatake Hangai, Koichi Shigenaga, Mamiko Yamaguchi, Morishige Hieda (Mitsubishi Electric Corp.) ED2009-178 MW2009-161 |
A compact and broadband All-Pass/Capacitive-Coupled BPF has been developed. The phase shifter is switching All-Pass netw... [more] | ED2009-178 MW2009-161 pp.23-27 |
| ED, MW | 2010-01-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Novel Left-Handed Waveguides Hiroaki Ikeuchi, Isao Ohta (Univ. of Hyogo), Mitsuyoshi Kishihara (Okayama Pre. Univ.), Tadashi Kawai (Univ. of Hyogo), Satoshi Matsumoto (Furuno Electric Co. Ltd.) ED2009-179 MW2009-162 |
This paper describes two new types of left-handed (LH) waveguides. One is composed of two waveguides stacked on the comm... [more] | ED2009-179 MW2009-162 pp.29-34 |
| ED, MW | 2010-01-13 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analytical and Experimental Considerations on Locking Characteristics of Band-stop Type of Self-injection Locked NRD Guide Gunn Oscillator at 60GHz Koichi Oue, Futoshi Kuroki (Kure Nat'l Coll. of Tech.), Tsukasa Yoneyama (Tohoku Inst. of Tech.) ED2009-180 MW2009-163 |
[more] | ED2009-180 MW2009-163 pp.35-38 |
| ED, MW | 2010-01-14 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-181 MW2009-164 |
III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capa... [more] | ED2009-181 MW2009-164 pp.39-42 |
| ED, MW | 2010-01-14 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-182 MW2009-165 |
We investigated the relationship between the emitter charging time and inverse current of heterojunction bipolar transis... [more] | ED2009-182 MW2009-165 pp.43-48 |
| ED, MW | 2010-01-14 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN HEMT having periodic mesa-gate structure Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166 |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] | ED2009-183 MW2009-166 pp.49-53 |
| ED, MW | 2010-01-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Invited Talk]
Development of high-performance ZnO-based FETs
-- Device applications and microwave performance -- Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.) ED2009-184 MW2009-167 |
Zinc Oxide (ZnO) has various advantages over other wide gap semiconductors. In order to evaluate its material feasibilit... [more] | ED2009-184 MW2009-167 pp.55-60 |
| ED, MW | 2010-01-14 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.) ED2009-185 MW2009-168 |
[more] | ED2009-185 MW2009-168 pp.61-64 |
| ED, MW | 2010-01-14 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2009-186 MW2009-169 |
Analysis of transient response of HfO2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to... [more] | ED2009-186 MW2009-169 pp.65-70 |
| ED, MW | 2010-01-14 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) ED2009-187 MW2009-170 |
[more] | ED2009-187 MW2009-170 pp.71-76 |
| ED, MW | 2010-01-14 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN channel high electron mobility transistors on AlN substrates. Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.) ED2009-188 MW2009-171 |
[more] | ED2009-188 MW2009-171 pp.77-80 |
| ED, MW | 2010-01-14 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.) ED2009-189 MW2009-172 |
In this paper, we successfully demonstrate a recessed gate normally-off AlGaN/GaN HFET on a silicon substrate with high ... [more] | ED2009-189 MW2009-172 pp.81-85 |
| ED, MW | 2010-01-15 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2009-190 MW2009-173 |
[more] | ED2009-190 MW2009-173 pp.87-92 |
| ED, MW | 2010-01-15 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 32-GS/s 6-bit Double-Sampling DAC in InP HBT Technology Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.) ED2009-191 MW2009-174 |
We have developed an ultrahigh-speed 6-bit DAC with InP HBT Technology. To achieve ultrahigh-speed operation, we devised... [more] | ED2009-191 MW2009-174 pp.93-97 |
| ED, MW | 2010-01-15 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Pseudo Sinusoidal Generator with PVT Compensation Circuit using InP HBTs
-- For Linear Control of Vector-Sum Phase Shifter -- Hideyuki Nosaka, Munehiko Nagatani, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.) ED2009-192 MW2009-175 |
A pseudo-sinusoidal generator is needed to realize a voltage-controlled vector-sum phase shifter that has linear phase c... [more] | ED2009-192 MW2009-175 pp.99-103 |
| ED, MW | 2010-01-15 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications Kazuya Yamamoto, Atsushi Okamura, Takayuki Matsuzuka, Yutaka Yoshii, Satoshi Suzuki, Masatoshi Nakayama, Teruyuki Shimura, Naohito Yoshida (Mitsubishi Electric Corp.) ED2009-193 MW2009-176 |
This paper describes circuit design and measurement results of an HBT MMIC power amplifier module (PA) operating with a ... [more] | ED2009-193 MW2009-176 pp.105-110 |
[Return to Top Page]