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|
| Chair |
|
Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Vice Chair |
|
Tatsuya Usami (Rapidus) |
| Secretary |
|
Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) |
| Assistant |
|
Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital) |
|
| Conference Date |
Fri, Jun 21, 2024 11:00 - 16:20 |
| Topics |
Material Science and Process Technology for MOS Devices, Memories, and Power Devices |
| Conference Place |
Osaka Umeda Campus, Kwansei Gakuin Univ. |
| Address |
19-19 Chayamachi, Kita-ku, Osaka 530-0013 |
| Transportation Guide |
https://global.kwansei.ac.jp/about/access/campus_access |
Contact
Person |
Prof. Takuji Hosoi
+81-6-6485-5611 |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Fri, Jun 21 AM
11:00 - 16:20 |
| (1) |
11:00-11:35 |
[Invited Talk]
Impact of Surface Potential Distribution at Insulator/Semiconductor Interface on Electrical Properties of MOS capacitor  SDM2024-19 |
Noriyuki Taoka, Yusuke Ichino, Yoshiyuki Seike, Tatsuo Mori (AIT) |
| (2) |
11:35-12:10 |
[Invited Talk]
First-Principles Prediction on NO Annealing Effect to SiC(0001) Step Interface SDM2024-20 |
Mitsuharu Uemoto, Nahoto Funaki (Kobe Univ.), Takuji Hosoi (Kwansei Univ.), Tomoya Ono (Kobe Univ.) |
| (3) |
12:10-12:45 |
[Invited Talk]
Random Potential Induced Characteristics Variations in MOSFETs SDM2024-21 |
Nobuya Mori (Osaka Univ.) |
| |
12:45-14:00 |
Lunch Break ( 75 min. ) |
| (4) |
14:00-14:35 |
[Invited Talk]
Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping SDM2024-22 |
Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.) |
| (5) |
14:35-15:10 |
[Invited Talk]
High-responsivity graphene-based visible image sensors by photogating effect SDM2024-23 |
Masaaki Shimatani, Shoichiro Fukushima, Manabu Iwakawa, Shinpei Ogawa (Mitsubishi Electric) |
| (6) |
15:10-15:45 |
[Invited Talk]
* SDM2024-24 |
Michiko Yoshitake (OSX) |
| (7) |
15:45-16:20 |
[Invited Talk]
Energy Band Structure and Carrier Transport Mechanism of Organic Semiconductors
-- Observation of Conduction Band Structure and Evidence of Polaron -- SDM2024-25 |
Hiroyuki Yoshida (Chiba Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 30 minutes for presentation and 5 minutes for discussion. |
| Invited Lecture | Each speech will have 30 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
※各研究会幹事もしくは担当者の連絡先を記載してください。 |
Last modified: 2024-04-18 17:13:28
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