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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tanemasa Asano
Vice Chair Toshihiro Sugii
Secretary Morifumi Ohno, Shigeru Kawanaka
Assistant Yuichi Matsui

Conference Date Thu, Mar 15, 2007 13:00 - 16:45
Topics  
Conference Place Kikai-Shinko-Kaikan Bldg. 

Thu, Mar 15 PM 
13:00 - 16:45
  13:00-13:05 Opening address ( 5 min. )
(1) 13:05-13:30 Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas)
(2) 13:30-13:55 Reset switching mechanism of ReRAM using thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.)
(3) 13:55-14:20 SiO2/SiOx/SiC/Si MIS Resistive Nonvolatile Memory Yoshiyuki Suda, Hiromi Hasegawa (Tokyo Univ. of Agric. & Technol.)
(4) 14:20-14:45 Impact of three-dimensional transistor on the pattern area reduction for high density ULSI Shigeyoshi Watanabe, Keisuke Okamoto, Yuu Hiroshima, Keisuke Koizumi, Makoto Oya (SIT)
  14:45-15:00 Break ( 15 min. )
(5) 15:00-15:25 [Invited Talk]
(111)-Oriented SrRuO3/Pt Bottom Electrode for Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3 Films for High Density Ferroelectric Random Access
Niclus Menou (Tokyo Inst. of Tech.), Hiroki Kuwabara, Hiroshi Funakubo (Tokyo Tech.)
(6) 15:25-15:50 Key Process Technology of Reliable Sub Micron Capacitor for High Density Chain-FeRAM Koji Yamakawa, Tohru Ozaki, Hiroyuki Kanaya, Iwao Kunishima, Yoshinori Kumura, Yoshiro Shimojo, Susumu Shuto, Osamu Hidaka, Yuki Yamada, Soi chi Yamazaki, Takeshi Hamamoto, Shinichiro Shiratake, Daisaburo Takashima, Tadashi Miyakawa, Sumito Ohtsuki (Toshiba)
(7) 15:50-16:15 Development of Microwave-Excited Plasma Enhanced Metal-Organic Chemical Vapor deposition System and Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Film Ichirou Takahashi, Kiyoshi Funawa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)
(8) 16:15-16:40 Design method of low-power dual-supply-voltage system LSI taking into account various leakage current of MOSFET Shigeyoshi Watanabe, Satoshi Hanami, Manabu Kobayashi, Toshinori Takabatake (SIT)
  16:40-16:45 closing ( 5 min. )

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Morifumi Ohno (Oki Electric Industry Co., Ltd.)
TEL:042-664-6680,FAX:042-667-8367
E--mail : oh565o 


Last modified: 2007-01-31 19:04:41


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