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| Chair |
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Takahiro Shinada (Tohoku Univ.) |
| Vice Chair |
|
Hiroshige Hirano (TowerJazz Panasonic) |
| Secretary |
|
Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY) |
| Assistant |
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Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.) |
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| Conference Date |
Wed, Oct 17, 2018 14:00 - 17:25
Thu, Oct 18, 2018 09:30 - 15:20 |
| Topics |
Process Science and New Process Technology |
| Conference Place |
Niche, Tohoku Univ. |
| Transportation Guide |
http://www.fff.niche.tohoku.ac.jp/index_e.html |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Wed, Oct 17 PM
14:00 - 17:25 |
| (1) |
14:00-14:50 |
[Invited Talk]
Fin-FET MONOS for Next Generation Automotive-MCU  SDM2018-52 |
Shibun Tsuda, Tomoya Saito, Hirokazu Nagase, Yoshiyuki Kawashima, Atsushi Yoshitomi, Shinobu Okanishi, Tomohiro Hayashi, Takuya Maruyama, Masao Inoue, Seiji Muranaka, Shigeki Kato, Takuya Hagiwara, Hirokazu Saito, Tadashi Yamaguchi, Masaru Kadoshima, Takahiro Maruyama, Tatsuyoshi Mihara, Hiroshi Yanagita, Kenichiro Sonoda, Yasuo Yamaguchi, Tomohiro Yamashita (Renesas) |
| (2) |
14:50-15:20 |
New piezoelectric materials by RF sputtering process and applications to sensor SDM2018-53 |
Fuminobu Imaizumi (NIT, Oyama College), kousuke Yanagida |
| (3) |
15:20-15:50 |
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating SDM2018-54 |
Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) |
| |
15:50-16:05 |
Break ( 15 min. ) |
| (4) |
16:05-16:35 |
Fabrication process of Hf-based MONOS nonvolatile memory with Si(100) surface flattening process SDM2018-55 |
Sohya Kudoh, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.) |
| (5) |
16:35-17:25 |
[Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States SDM2018-56 |
Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) |
Thu, Oct 18 AM
09:30 - 15:20 |
| (6) |
09:30-10:20 |
[Invited Talk]
A lesson from Kumamoto earthquake disaster at Sony Semiconductor Manufacturing Kumamoto Technology Center SDM2018-57 |
Hiromi Suzuki (Kumamoto Univ.), Yasuhiro Ueda (Sony Corp.) |
| (7) |
10:20-10:50 |
Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering SDM2018-58 |
Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) |
| (8) |
10:50-11:20 |
Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process SDM2018-59 |
Rengie Mark D. Mailig, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech.) |
| |
11:20-13:00 |
Break ( 100 min. ) |
| (9) |
13:00-13:30 |
Improvement of Pentacene/SiO2 Interface Properties by the N-doped LaB6 Interfacial Layer SDM2018-60 |
Yasutaka Maeda, Kyung Eun Park, Yuki Komatsu, Shun-ichiro Ohmi (Tokyo Tech) |
| (10) |
13:30-14:00 |
Process Evaluation of Si Nanowire for Thermoelectric Device by Raman Spectroscopy SDM2018-61 |
Ryo Yokogawa (Meiji Univ.), Motohiro Tomita, Takanobu Watanabe (Waseda Univ.), Atsushi Ogura (Meiji Univ.) |
| (11) |
14:00-14:30 |
Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain SDM2018-62 |
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) |
| (12) |
14:30-15:20 |
[Invited Talk]
Promotion of Silicon Island in Kumamoto area and reconstruction from the earthquake disaster
-- How to develop Japanese semiconductor industry with academia collaboration -- SDM2018-63 |
Hiroshi Kubota (Kumamoto Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E- :        e3   |
Last modified: 2018-08-19 13:26:57
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