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| Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
| Vice Chair |
|
Tatsuya Kunikiyo (Renesas) |
| Secretary |
|
Rihito Kuroda (Tohoku Univ.) |
| Assistant |
|
Tadashi Yamaguchi (Renesas) |
|
| Conference Date |
Thu, Nov 6, 2014 10:05 - 15:30
Fri, Nov 7, 2014 10:00 - 14:40 |
| Topics |
Process, Device, Circuit Simulation, etc. |
| Conference Place |
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| Transportation Guide |
http://www.jspmi.or.jp/english/about/access.html |
| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 6 AM
10:00 - 11:45 |
| |
10:00-10:05 |
Opening Address ( 5 min. ) |
| (1) |
10:05-10:30 |
An Analytical Modeling for Asymmetric Double Gate Tunnel Field Effect Transistor  SDM2014-96 |
Lv Hongfei, Shingo Sato, Yasuhisa Omura (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) |
| (2) |
10:30-10:55 |
Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET SDM2014-97 |
Yasuhisa Omura, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) |
| (3) |
10:55-11:20 |
Three-dimensional calculation of ion implantation to SiC substrate SDM2014-98 |
Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft) |
| (4) |
11:20-11:45 |
Spice Model of SiC Power MOSFET (DioMOS)
-- Modeling Methodology for Reverse Current-voltage Characteristics of SiC -- SDM2014-99 |
Tetsuya Yamamoto, Tetsuro Sawai, Nobuyuki Horikawa, Yoshihiko Kanzawa, Kenji Mizutani, Nobuyuki Otsuka, Eiji Fujii (Panasonic) |
| |
11:45-13:00 |
Lunch Break ( 75 min. ) |
Thu, Nov 6 PM
13:00 - 15:30 |
| (5) |
13:00-13:50 |
[Invited Talk]
Device simulation
-- More than 30 years in Toshiba's TCAD -- SDM2014-100 |
Naoyuki Shigyo (Toshiba) |
| (6) |
13:50-14:40 |
[Invited Talk]
Recent Progress in Electronic Device Materials Design by Computational Physics SDM2014-101 |
Hiroyuki Kageshima (Shimane Univ.) |
| (7) |
14:40-15:30 |
[Invited Talk]
Modeling and Simulation of Charge-Trapping Memory and Reliability Issues SDM2014-102 |
Takamitsu Ishihara, Naoki Yasuda, Shosuke Fujii (Toshiba) |
Fri, Nov 7 AM
10:00 - 11:40 |
| (8) |
10:00-10:50 |
[Invited Talk]
SISPAD 2014 Review SDM2014-103 |
Kenichiro Sonoda (Renesas Electronics) |
| (9) |
10:50-11:15 |
Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon SDM2014-104 |
Koji Sueoka, Eiji Kamiyama, Kozo Nakamura (Okayama Pref. Univ.), Jan Vanhellemont (Ghent Univ.) |
| (10) |
11:15-11:40 |
Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method SDM2014-105 |
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) |
| |
11:40-13:00 |
Lunch Break ( 80 min. ) |
Fri, Nov 7 PM
13:00 - 14:40 |
| (11) |
13:00-13:50 |
[Invited Talk]
Statistical analysis of random telegraph noise and its consequence for modeling of oxide traps SDM2014-106 |
Hiroshi Miki (Hitachi) |
| (12) |
13:50-14:40 |
[Invited Talk]
Interface Engineering for High Mobility Ge MOSFETs: Surface Orientation and Scattering Mechanism SDM2014-107 |
ChoongHyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Hisahiro Ansai (Sony)
E- : Hi    Ani   ny
Tatsuya Kunikiyo (Renesas Electronics)
E-:        zn  s |
Last modified: 2014-10-09 08:31:33
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