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Technical Committee on Electron Devices (ED) (Searched in: 2015)
Search Results: Keywords 'from:2015-07-24 to:2015-07-24'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2015-07-24 13:15 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical characteristics of N-polar p-type GaN Schottky contacts Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui)  ED2015-36 |
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) ... [more] | ED2015-36 pp.1-4 |
| ED | 2015-07-24 13:40 |
Ishikawa | IT Business Plaza Musashi 5F | Characterization of Schottky diodes on cleaved m-plane surface of free-standing n-GaN substrates Moe Naganawa, Toshichika Aoki (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-37 |
[more] | ED2015-37 pp.5-8 |
| ED | 2015-07-24 14:05 |
Ishikawa | IT Business Plaza Musashi 5F | Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38 |
[more] | ED2015-38 pp.9-13 |
| ED | 2015-07-24 14:30 |
Ishikawa | IT Business Plaza Musashi 5F | Low-frequency noise in AlN/AlGaN/GaN metal-insulator-semiconductor devices Toshi-kazu Suzuki, Son Phuong Le, Tuan Quy Nguyen, Hong-An Shih (JAIST) ED2015-39 |
[more] | ED2015-39 pp.15-20 |
| ED | 2015-07-24 15:10 |
Ishikawa | IT Business Plaza Musashi 5F | Band alignment at SiO2/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (MURA Corp.), Masataka Higashiwaki (NICT) ED2015-40 |
[more] | ED2015-40 pp.21-24 |
| ED | 2015-07-24 15:35 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical properties of SiC MOSFETs with various substrate impurity concentrations Hiroshi Yano (NAIST/Univ. Tsukuba), Hiroto Yuki, Takashi Fuyuki (NAIST) ED2015-41 |
We have investigated electrical properties of n-channel MOSFETs fabricated on Si-face 4H-SiC with various substrate impu... [more] | ED2015-41 pp.25-29 |
| ED | 2015-07-24 16:00 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of MFS-type diamond FET structure using organic ferroelectrics Ryota Karaya, Hiroyuki Furuichi (Kanazawa Univ.), Takashi Nakajima (Tokyo Univ. of Sci.), Norio Tokuda, Takeshi Kawae (Kanazawa Univ.) ED2015-42 |
[more] | ED2015-42 pp.31-34 |
| ED | 2015-07-25 10:15 |
Ishikawa | IT Business Plaza Musashi 5F | In-plane electrical properties of MnAs/InAs/GaAs(111)B heterostructures Md Earul Islam, Cong Thanh Nguyen, Masashi Akabori (JAIST) ED2015-43 |
[more] | ED2015-43 pp.35-38 |
| ED | 2015-07-25 10:40 |
Ishikawa | IT Business Plaza Musashi 5F | Fabrication of InGaAs channel multi-gate MOSFET’s with MOVPE regrown source/drain Haruki Kinoshita, Seiko Netsu, Yuichi Mishima, Toru Kanazawa, Yasuyuki Miyamoto (Tokyo Tech) ED2015-44 |
InGaAs MOSFETs are attractive candidate for future high-speed and low-power-consumption devices. To enhance the performa... [more] | ED2015-44 pp.39-44 |
| ED | 2015-07-25 11:05 |
Ishikawa | IT Business Plaza Musashi 5F | Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) ED2015-45 |
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] | ED2015-45 pp.45-49 |
| ED | 2015-07-25 11:30 |
Ishikawa | IT Business Plaza Musashi 5F | Delta-Sigma Strain Sensor Using a Resonant Tunneling Diode Koichi Maezawa, Yuichiro Kakutani, Taishu Nakayama, Takumi Tajika, Masayuki Mori (Univ. Toyama) ED2015-46 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] | ED2015-46 pp.51-55 |
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