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Technical Committee on Microwaves (MW) (Searched in: 2020)
Search Results: Keywords 'from:2021-01-29 to:2021-01-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2021-01-29 10:30 |
Online | Online | Study on a design theory for electromagnetically-coupled half-wavelength resonator filter Motoki Futatsuya, Toshio Ishizaki (Ryukoku Univ)  ED2020-27 MW2020-80 |
Currently, the number of small base stations is being increased with the development of 5G communication technology. In ... [more] | ED2020-27 MW2020-80 pp.1-6 |
| MW, ED | 2021-01-29 10:55 |
Online | Online | Experimental Evaluation of 60-GHz Band Planar Antenna Consisting of Multiple Radiators and Multiple Resonators for Radiation of Three Orthogonal Components Masataka Ohira, Zhewang Ma (Saitama Univ.) ED2020-28 MW2020-81 |
This paper reports the experimental evaluation results of a 60-GHz band planar MRMR (Multiple Radiators Multiple Resonat... [more] | ED2020-28 MW2020-81 pp.7-12 |
| MW, ED | 2021-01-29 11:20 |
Online | Online | The Fabrication of Time to Digital Converter using phase states at different timings Yoshiaki Morino, Masaomi Tsuru (Mitsubishi Electric) ED2020-29 MW2020-82 |
[more] | ED2020-29 MW2020-82 pp.13-16 |
| MW, ED | 2021-01-29 11:45 |
Online | Online | A V-band Reciever including Vector Sum Phase Shifter with Two Frequency Mixing Shinya Yokomizo, Morino Yoshiaki, Tsuru Masaomi (Mitsubishi Electric Corp.) ED2020-30 MW2020-83 |
[more] | ED2020-30 MW2020-83 pp.17-21 |
| MW, ED | 2021-01-29 13:00 |
Online | Online | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] | ED2020-31 MW2020-84 pp.22-25 |
| MW, ED | 2021-01-29 13:25 |
Online | Online | Analysis of sidegate effect by 2D device simulation in AlGaN/GaN HEMT with different traps Kaito Ito, Toshiyuki Oishi (Saga Univ.) ED2020-32 MW2020-85 |
[more] | ED2020-32 MW2020-85 pp.26-29 |
| MW, ED | 2021-01-29 13:50 |
Online | Online | High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] | ED2020-33 MW2020-86 pp.30-33 |
| MW, ED | 2021-01-29 14:25 |
Online | Online | Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] | ED2020-34 MW2020-87 pp.34-37 |
| MW, ED | 2021-01-29 14:50 |
Online | Online | A study on precise extraction of parasitic resistances in InGaAs HEMTs Keigo Yaguchi (Tokyo Univ. of Science), Tomotaka Hosotani (Tohoku Univ.), Yohtaro Umeda, Kyoya Takano (Tokyo Univ. of Science), Tetsuya Suemitsu, Akira Satou (Tohoku Univ.) ED2020-35 MW2020-88 |
In this paper, we propose a new method to extract the parasitic resistances of high electron mobility transistor (HEMT) ... [more] | ED2020-35 MW2020-88 pp.38-43 |
| MW, ED | 2021-01-29 15:15 |
Online | Online | A Study on High-efficiency CMOS Stacked Power Amplifier Based on Harmonic-Tuned Using Gate Capacitance Shinji Takezoe, Yoshiaki Morino, Masaomi Tsuru (Mitsubishi Electric Corp.) ED2020-36 MW2020-89 |
[more] | ED2020-36 MW2020-89 pp.44-48 |
| MW, ED | 2021-01-29 15:50 |
Online | Online | [Invited Talk]
Efficiency Enhancement and Digital Predistortion Technique for Next Generation Power Amplifiers Atsushi Yamaoka, Thomas Hone, Yoshimasa Egashira, Keiichi Yamaguchi (Toshiba) ED2020-37 MW2020-90 |
[more] | ED2020-37 MW2020-90 pp.49-54 |
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