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Technical Committee on Microwaves (MW) (Searched in: 2022)
Search Results: Keywords 'from:2023-01-27 to:2023-01-27'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2023-01-27 09:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
A Calibration method for RF Spectrum Regeneration Using Direct RF Undersampling at Different Sampling Frequency Multi-path Takashi Shiba, Tomoyuki Furuichi, Noriharu Suematsu (Tohoku Univ.)  ED2022-86 MW2022-145 |
A direct RF undersampling method is an important technique for simple circuits and devices because sampling frequency of... [more] | ED2022-86 MW2022-145 pp.1-6 |
| MW, ED | 2023-01-27 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Design of Parasitic-Element Loaded Wideband Filtering Antenna with Unidirectional Radiation Pattern over 30% Frequency Bandwidth Ken Sakiyama, Masataka Ohira, Zhewang Ma (Saitama Univ.) ED2022-87 MW2022-146 |
In this paper, we propose a new structure of wideband filtering antenna that realizes a very flat in-band gain and unidi... [more] | ED2022-87 MW2022-146 pp.7-12 |
| MW, ED | 2023-01-27 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
A Reinforcement Learning Approach Enabling Automatic Microstrip BPF Design for Multiple Specifications Yuto Asai, Masataka Ohira, Zhewang Ma (Saitama Univ.) ED2022-88 MW2022-147 |
[more] | ED2022-88 MW2022-147 pp.13-18 |
| MW, ED | 2023-01-27 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Measurement Evaluation of Bias Dependence of Single-Input Broadband GaN Amplifier Yuki Nakagawa, Takana Kaho (Shonan Inst. Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (MELCO) ED2022-89 MW2022-148 |
We are researching a broadband GaN amplifier for 4G/5G base stations covering a 4GHz band from 800MHz to 4.8GHz. We aim ... [more] | ED2022-89 MW2022-148 pp.19-24 |
| MW, ED | 2023-01-27 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Over 670 W output X-band IMFET Using non-Uniform Comb Lines for Stabilization Eigo Kuwata, Takumi Sugitani, Takashi Yamasaki, Yoshitaka Kamo, Shintaro Shinjo (MELCO) ED2022-90 MW2022-149 |
[more] | ED2022-90 MW2022-149 pp.25-28 |
| MW, ED | 2023-01-27 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters
-- Device Simulation Study -- Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2022-91 MW2022-150 |
GaN HEMTs are used in high frequency and power electronics applications. Advanced systems demand improvement of characte... [more] | ED2022-91 MW2022-150 pp.29-32 |
| MW, ED | 2023-01-27 13:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
ED2022-92 MW2022-151 |
(To be available after the conference date) [more] | ED2022-92 MW2022-151 pp.33-35 |
| MW, ED | 2023-01-27 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152 |
(To be available after the conference date) [more] | ED2022-93 MW2022-152 pp.36-39 |
| MW, ED | 2023-01-27 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata (SEI) ED2022-94 MW2022-153 |
[more] | ED2022-94 MW2022-153 pp.40-43 |
| MW, ED | 2023-01-27 14:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application Koji Matsunaga (SIT) ED2022-95 MW2022-154 |
In recent years, High frequency GaN Transistor are used in many kinds of high frequency applications such as base-statio... [more] | ED2022-95 MW2022-154 pp.44-49 |
| MW, ED | 2023-01-27 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Requierements for sharing type 4G/5G base station transciever amplifiers Koji Yamanaka, Yuji Komatsuzaki, Shuichi Sakata, Kento Saiki (Mitsubishi Electric), Takana Kaho (SIT) ED2022-96 MW2022-155 |
In post-5G era (latter half of 2020s), mobile base-stations are assumed to be shared between mobile operators to reduce ... [more] | ED2022-96 MW2022-155 p.50 |
| MW, ED | 2023-01-27 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Microwave Semiconductor Devices and Circuits for Industrial Innovation Kazuhiko Honjo (UEC) ED2022-97 MW2022-156 |
For the past 100 years, the electron saturation velocity, which is an important parameter of semiconductors, has been ab... [more] | ED2022-97 MW2022-156 pp.51-54 |
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