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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2012)
Search Results: Keywords 'from:2013-02-27 to:2013-02-27'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED | 2013-02-27 13:30 |
Hokkaido | Hokkaido Univ. | [Invited Talk]
Ballistic transport and photovoltaic effect in graphene/h-BN Tomoki Machida (Univ. of Tokyo/JST), Satoru Masubuchi, Masahiro Onuki, Kazuyuki Iguchi, Sei Morikawa, Takehiro Yamaguchi, Miho Arai (Univ. of Tokyo), Kenji Watanabe, Takashi Taniguchi (NIMS)  ED2012-128 SDM2012-157 |
We study magnetotransport in ballistic graphene mesoscopic wires on hexagonal boron nitride (h-BN). We observed anomalou... [more] | ED2012-128 SDM2012-157 pp.1-5 |
| SDM, ED | 2013-02-27 14:10 |
Hokkaido | Hokkaido Univ. | Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS) ED2012-129 SDM2012-158 |
The enhancement of Seebeck coefficient by controlling the Si Fermi energy is one of key issues for enhancing the thermoe... [more] | ED2012-129 SDM2012-158 pp.7-11 |
| SDM, ED | 2013-02-27 14:35 |
Hokkaido | Hokkaido Univ. | Fabrication of Cu2O/TiO2 heterojunction solar cells by electrochemical deposition and electrophoresis Yoshihito Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-130 SDM2012-159 |
[more] | ED2012-130 SDM2012-159 pp.13-17 |
| SDM, ED | 2013-02-27 15:00 |
Hokkaido | Hokkaido Univ. | possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation Hiromu Sakakibara, Koji Wada, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2012-131 SDM2012-160 |
[more] | ED2012-131 SDM2012-160 pp.19-24 |
| SDM, ED | 2013-02-27 15:40 |
Hokkaido | Hokkaido Univ. | Individual Dopant Nature in Si Lateral Nano-pn Junctions Sri Purwiyanti, Arief Udhiarto (Shizuoka Univ./Univ. Indonesia), Roland Nowak (Shizuoka Univ./Warsaw Univ. of Tech.), Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Djoko Hartanto (Univ. Indonesia), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2012-132 SDM2012-161 |
In this work, we report the experimental observation of dopant signature in nanoscale ultra-thin SOI pn junctions. At te... [more] | ED2012-132 SDM2012-161 pp.25-30 |
| SDM, ED | 2013-02-27 16:05 |
Hokkaido | Hokkaido Univ. | Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.) ED2012-133 SDM2012-162 |
We focus on Self Switching nano-Diodes (SSD) as a application for oxide semiconductors. The SSD is a novel functional na... [more] | ED2012-133 SDM2012-162 pp.31-34 |
| SDM, ED | 2013-02-27 16:30 |
Hokkaido | Hokkaido Univ. | Fabrication of Graphene-based Three-branch Nano-junction (TBJ) and Its Application to Logic Circuits Xiang Yin, Seiya Kasai (Hokkaido Univ.) ED2012-134 SDM2012-163 |
A graphene-based three-branch nano-junction (TBJ) devices is investigated for its application to Boolean logic gates. Ow... [more] | ED2012-134 SDM2012-163 pp.35-38 |
| SDM, ED | 2013-02-27 16:55 |
Hokkaido | Hokkaido Univ. | Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.) ED2012-135 SDM2012-164 |
Al2O3/InSb/Si MOSFETs were fabricated with a thin InSb channel layer grown directly on Si(111) substrates. The InSb thic... [more] | ED2012-135 SDM2012-164 pp.39-42 |
| SDM, ED | 2013-02-27 17:20 |
Hokkaido | Hokkaido Univ. | Field-Assisted Self -Assembly Process of InAs nanowires Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.) ED2012-136 SDM2012-165 |
Field-assisted self-assembly process (FASA) of InAs and InAs/InP core-shell nanowires onto a Si substrate has been inves... [more] | ED2012-136 SDM2012-165 pp.43-46 |
| SDM, ED | 2013-02-28 09:00 |
Hokkaido | Hokkaido Univ. | Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166 |
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] | ED2012-137 SDM2012-166 pp.47-52 |
| SDM, ED | 2013-02-28 09:25 |
Hokkaido | Hokkaido Univ. | Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167 |
A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-ele... [more] | ED2012-138 SDM2012-167 pp.53-58 |
| SDM, ED | 2013-02-28 09:50 |
Hokkaido | Hokkaido Univ. | Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-139 SDM2012-168 |
The island charge of a single-electron (SE) transistor is discrete because of SE tunneling through tiny tunnel junctions... [more] | ED2012-139 SDM2012-168 pp.59-64 |
| SDM, ED | 2013-02-28 10:15 |
Hokkaido | Hokkaido Univ. | Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island Masashi Takiguchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-140 SDM2012-169 |
Negative magnetoresistance ratio is shown in ferromagnet-superconductor-ferromagnet double tunnel junctions. An excessiv... [more] | ED2012-140 SDM2012-169 pp.65-70 |
| SDM, ED | 2013-02-28 10:55 |
Hokkaido | Hokkaido Univ. | Surface Modification of Graphene by Scanning Probe Microscopy Scratch Nanolithography Ryutaro Suda, Takanari Saito, Taku Yoshida (Tokyo Univ. of Agriculture and Tech.), Ampere A. Tseng (Arizona State Univ.), Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.) ED2012-141 SDM2012-170 |
Scanning probe microscopes (SPMs) have been known as not only observation tools but also nanolithography ones. In partic... [more] | ED2012-141 SDM2012-170 pp.71-76 |
| SDM, ED | 2013-02-28 11:20 |
Hokkaido | Hokkaido Univ. | In-Situ Temperature Measurements of Joule-Heated Graphene Using Near-Infrared CCD Imaging System Takanari Saito, Ibuki Atsumo, Ryutaro Suda, Mitsuki Ito, Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.) ED2012-142 SDM2012-171 |
We report temperature distribution of graphene during Joule heating process using in-situ Near-Infrared (NIR) Charge-Cou... [more] | ED2012-142 SDM2012-171 pp.77-82 |
| SDM, ED | 2013-02-28 11:45 |
Hokkaido | Hokkaido Univ. | Electrical Properties of Carbon Fibers Embedded with CNTs Takehito Watanuki, Tomo Tanaka, Eiichi Sano, Bunshi Fugetsu (Hokkaido Univ.) ED2012-143 SDM2012-172 |
We measured the temperature dependence of electrical conductivity and low-frequency noise characteristics for PAN-based ... [more] | ED2012-143 SDM2012-172 pp.83-88 |
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