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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
NS |
2012-10-11 16:25 |
Kyoto |
Kyoto Univ. |
[Invited Talk]
* Masahiko Suenaga (Hitachi Cable) |
[more] |
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ED |
2012-07-26 15:25 |
Fukui |
Fukui University |
Effect of ICP Etching on p-type GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Kazuki Nomoto (Univ. of Notre Dame), Kenji Shiojima (Univ. of Fukui) ED2012-45 |
Low-Mg-doped p-GaN Schottky contacts were applied to evaluate inductive coupled plasma (ICP) etching damages. The ICP ... [more] |
ED2012-45 pp.21-24 |
ED |
2012-07-26 15:50 |
Fukui |
Fukui University |
Electrical Characteristics of Surface Stoichiometry Controlled p-GaN Schottky Contacts Toshifumi Takahashi (Univ. of Fukui), Naoki Kaneda, Tomoyoshi Mishima (Hitachi Cable), Takashi Kajiwara, Satoru Tanaka (Kyushu Univ.), Kenji Shiojima (Univ. of Fukui) ED2012-46 |
Experimental results of electrical characteristics of Au/Ni Schottky contacts formed on three kinds of p-GaN layers, whi... [more] |
ED2012-46 pp.25-30 |
LQE, ED, CPM |
2011-11-17 12:55 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Realization of Freestanding GaN Substrates with High Surface Quality and Low Dislocation Density by Crystal Hardness Control Hajime Fujikura, Yuichi Oshima, Takehiro Yoshida, Takeshi Megro, Toshiya Saito (Hitachi Cable) ED2011-77 CPM2011-126 LQE2011-100 |
In the growth of freestanding GaN substrates using our void-assisted separation (VAS) method, we have effectively suppre... [more] |
ED2011-77 CPM2011-126 LQE2011-100 pp.19-24 |
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