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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, EID 2014-12-12
10:30		 Kyoto Kyoto University Activation of B+ or B10H14+ Implanted Silicon by Soft X-ray Irradiation
Akira Heya, Fumito Kusakabe, Shota Hirano, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) EID2014-15 SDM2014-110		  [more] EID2014-15 SDM2014-110
pp.13-16
SDM, EID 2014-12-12
16:00		 Kyoto Kyoto University Formation of nc-Si in SiOx by Soft X-ray Irradiation
Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2014-32 SDM2014-127		  [more] EID2014-32 SDM2014-127
pp.99-102
SDM 2013-12-13
13:30		 Nara NAIST Low-Temperature Crystallization of Thin-Film Semiconductor by Soft X-ray Irradiation -- Photon Energy Dependence and TEM Observation of SiGe Multilayer Film --
Fumito Kusakabe, Yuki Maruyama, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki (Univ. of Hyogo), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.) SDM2013-126		 We examined dependence of the crystallization for a-Ge and a-SiGe on the photon energy. In the storage-ring current of 7... [more] SDM2013-126
pp.61-66
SDM 2013-12-13
13:50		 Nara NAIST Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source
Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus) SDM2013-127		 To realize a ultrathin junction with 10nm depth, a novel activation method of B dopant using soft X-ray undulator was ex... [more] SDM2013-127
pp.67-72
 Results 1 - 4 of 4  /   
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