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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2016)
Search Results: Keywords 'from:2017-02-06 to:2017-02-06'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2017-02-06 10:05 |
Tokyo | Tokyo Univ. | [Invited Talk]
Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure Masako Kodera, Hiroyuki Yano, Naoto Miyashita (Toshiba)  SDM2016-139 |
We evaluated the impact of process damage caused by dry or sputtering on chemical mechanical planarization (CMP) with Cu... [more] | SDM2016-139 pp.1-4 |
| SDM | 2017-02-06 10:40 |
Tokyo | Tokyo Univ. | [Invited Talk]
Fabrication of High-Quality Metalic Films for ULSI by ALD Yukihiro Shimogaki (UTokyo) SDM2016-140 |
[more] | SDM2016-140 pp.5-10 |
| SDM | 2017-02-06 11:15 |
Tokyo | Tokyo Univ. | [Invited Talk]
NiGe/Ge contact formation by microwave annealing method for low-thermal budget processing Osamu Nakatsuka (Grad. Sch. of Eng., Nagoya University), Yoshimasa Watanabe (TEL), Akihiro Suzuki (Grad. Sch. of Eng., Nagoya University), Yoshio Nishi (Dept. of Electrical Engineering, Stanford University), Shigeaki Zaima (IMaSS, Nagoya University) SDM2016-141 |
[more] | SDM2016-141 pp.11-15 |
| SDM | 2017-02-06 13:00 |
Tokyo | Tokyo Univ. | [Invited Talk]
Huge-potential need to the memory-system for ultra-long term preservation and its issues
-- Development of the WASHI in digital era -- Toshio Kobayashi (SIT) SDM2016-142 |
The amount of information created increases to explosion due to the great convenience and power of digital technology. ... [more] | SDM2016-142 pp.17-22 |
| SDM | 2017-02-06 13:35 |
Tokyo | Tokyo Univ. | [Invited Talk]
Electrical coupling of stacked transistors in monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness Junichi Hattori, Koichi Fukuda, Toshifumi Irisawa, Hiroyuki Ota, Tatsuro Maeda (AIST) SDM2016-143 |
We study the electrical coupling of stacked transistors in monolithic three-dimensional (3D) inverters and investigate i... [more] | SDM2016-143 pp.23-28 |
| SDM | 2017-02-06 14:10 |
Tokyo | Tokyo Univ. | [Invited Talk]
Large Scale Crossbar Switch Block (CSB) with Via-Switch for a Low-Power FPGA Naoki Banno, Munehiro Tada, Koichiro Okamoto, Noriyuki Iguchi, Toshitsugu Sakamoto, Hiromitsu Hada (NEC Corp.), Hiroyuki Ochi (Ritsumeikan Univ.), Hidetoshi Onodera (Kyoto Univ.), Masanori Hashimoto (Osaka Univ.), Tadahiko Sugibayashi (NEC Corp.) SDM2016-144 |
[more] | SDM2016-144 pp.29-34 |
| SDM | 2017-02-06 15:00 |
Tokyo | Tokyo Univ. | [Invited Talk]
Properties of amorphous Co alloys having liner/barrier function in advanced LSI interconnection Maryamsadat Hosseini, Hiroyuki Koide, Kazuki Watanabe, Daisuke Ando, Yuji Sutou, Junichi Koike (Tohoku Univ.) |
[more] | |
| SDM | 2017-02-06 15:35 |
Tokyo | Tokyo Univ. | [Invited Talk]
Development of a Wet Cleaning Process for High-Yield Formation of via-last TSVs Naoya Watanabe (AIST), Hidekazu Kikuchi, Azusa Yanagisawa (LAPIS), Haruo Shimamoto, Katsuya Kikuchi, Masahiro Aoyagi (AIST), Akio Nakamura (LAPIS) SDM2016-145 |
[more] | SDM2016-145 pp.35-40 |
| SDM | 2017-02-06 16:10 |
Tokyo | Tokyo Univ. | [Invited Talk]
Direct Cu metallization on TGV Glass substrate using Wet Process. Kotoku Inoue, Masatoshi Takayama, Tsubasa Fujimura, Shigeo Onitake (Koto) SDM2016-146 |
It is believed that conformal metallization or via filling on glass with the highly conductive thick Cu material is expe... [more] | SDM2016-146 pp.41-44 |
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