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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2007)
Search Results: Keywords 'from:2007-10-04 to:2007-10-04'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2007-10-05 15:00 |
Miyagi | Tohoku Univ. | Atomic order flatting technology of silicon surface Tomoyuki Suwa, Rihito Kuroda, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.)  SDM2007-190 |
In this paper, atomically flat silicon surface can be realized by annealing at 1200℃ in Argon gas atmosphere, and it is ... [more] | SDM2007-190 pp.57-59 |
| SDM | 2007-10-05 15:25 |
Miyagi | Tohoku Univ. | Shallow Junction Formation Using Combination of LSA and Spike-RTA Seiichi Endo, Yoshiki Maruyama, Yoji Kawasaki, Tomohiro Yamashita, Hidekazu Oda, Yasuo Inoue (Renesas) SDM2007-191 |
In this work, Xj-Rs tradeoffs of BF2-SDE are investigated for several combinations of spike-RTA and LSA, and it is demon... [more] | SDM2007-191 pp.61-64 |
| SDM | 2007-10-05 15:50 |
Miyagi | Tohoku Univ. | Statistical Evaluation of Random Telegraph Signal Using a Very Large-scale Array TEG Kenichi Abe, Shigetoshi Sugawa, Rihito Kuroda, Syunichi Watabe, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) SDM2007-192 |
In this work, we propose a statistical evaluation technique of Random Telegraph Signal using a novel Test Element Group ... [more] | SDM2007-192 pp.65-68 |
| SDM | 2007-10-05 16:15 |
Miyagi | Tohoku Univ. | Statistical Evaluation of Characteristics Variability caused by Plasma Processes Syunichi Watabe, Shigetoshi Sugawa, Kenichi Abe, Takafumi Fujisawa, Naoto Miyamoto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) SDM2007-193 |
In this paper, we report the statistical evaluation of characteristics degradation in MOSFETs caused by plasma damages w... [more] | SDM2007-193 pp.69-72 |
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