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Technical Committee on Microwaves (MW)  (Searched in: 2011)

Search Results: Keywords 'from:2012-01-11 to:2012-01-11'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 21 - 24 of 24 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2012-01-12
15:10
Tokyo Kikai-Shinko-Kaikan Bldg Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications
Ken Kikuchi, Fumikazu Yamaki, Kazutaka Inoue (SEI), Masahiro Nishi, Hitoshi Haematsu, Norihiko Ui, Kaname Ebihara, Atsushi Nitta (SEDI), Seigo Sano (SEI) ED2011-138 MW2011-161
We have evaluated our L/S-band GaN HEMT for ruggedness and reliability. In terms of ruggedness, we demonstrated our GaN ... [more] ED2011-138 MW2011-161
pp.107-110
ED, MW 2012-01-12
15:35
Tokyo Kikai-Shinko-Kaikan Bldg Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates
Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-139 MW2011-162
We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB oper... [more] ED2011-139 MW2011-162
pp.111-115
ED, MW 2012-01-12
16:00
Tokyo Kikai-Shinko-Kaikan Bldg X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power
Osamu Moriya, Kenta Kuroda, Keiichi Matsushita, Tomohide Soejima, Kazutaka Takagi, Shinji Takatsuka (TOSHIBA) ED2011-140 MW2011-163
A Small Packaged Power Amplifier(PA) is developed at X-band. This amplifier has high gain by 2-stage amplifiers into 1-s... [more] ED2011-140 MW2011-163
pp.117-120
ED, MW 2012-01-12
16:25
Tokyo Kikai-Shinko-Kaikan Bldg High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] ED2011-141 MW2011-164
pp.121-123
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