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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2011)
Search Results: Keywords 'from:2011-11-17 to:2011-11-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2011-11-18 12:45 |
Kyoto | Katsura Hall，Kyoto Univ. | Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW)  ED2011-93 CPM2011-142 LQE2011-116 |
We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a... [more] | ED2011-93 CPM2011-142 LQE2011-116 pp.103-106 |
| LQE, ED, CPM | 2011-11-18 13:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Investigation for chracteristics of AlN growth depending on m- and a-axis oriented off-angle of c-sapphire substrate and fabrication of high-efficiency AlGaN Deep-UV LEDs Noritoshi Maeda, Hideki Hirayama, Sachie Fujikawa (RIKEN) ED2011-94 CPM2011-143 LQE2011-117 |
(To be available after the conference date) [more] | ED2011-94 CPM2011-143 LQE2011-117 pp.107-112 |
| LQE, ED, CPM | 2011-11-18 13:35 |
Kyoto | Katsura Hall，Kyoto Univ. | Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118 |
We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epi... [more] | ED2011-95 CPM2011-144 LQE2011-118 pp.113-116 |
| LQE, ED, CPM | 2011-11-18 14:15 |
Kyoto | Katsura Hall，Kyoto Univ. | Growth of (Si)(Ga)AlC(P) thin film on sapphire by metal organic chemical vapor deposition Yuya Ohnishi, Fumiya Horie, Shiro Sakai (Tokushimadai) ED2011-96 CPM2011-145 LQE2011-119 |
Al4C3 film was grown by MOCVD by supplying TMA, CH4 on sapphire. Si and P were supplied to make it to dope to n-type. Th... [more] | ED2011-96 CPM2011-145 LQE2011-119 pp.117-120 |
| LQE, ED, CPM | 2011-11-18 14:40 |
Kyoto | Katsura Hall，Kyoto Univ. | Metalorganic Chemical Vapor Deposition Growth of GaN Nanowires and Their Application to Single Photon Sources Munetaka Arita, Kihyun Choi, Yasuhiko Arakawa (Univ. of Tokyo) ED2011-97 CPM2011-146 LQE2011-120 |
We analyzed several growth parameter dependences of the crystal morphology of GaN nanowires grown by spontaneous or sele... [more] | ED2011-97 CPM2011-146 LQE2011-120 pp.121-126 |
| LQE, ED, CPM | 2011-11-18 15:05 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121 |
We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at t... [more] | ED2011-98 CPM2011-147 LQE2011-121 pp.127-130 |
| LQE, ED, CPM | 2011-11-18 15:30 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication of GaN based Terahertz-Quantum Cascade Laser Structure and Observation of Spontaneous Emission Wataru Terashima, Hideki Hirayama (RIKEN) ED2011-99 CPM2011-148 LQE2011-122 |
We study on terahertz-quantum cascade lasers (THz-QCLs) using III-Nitride semiconductors, for the realization of the une... [more] | ED2011-99 CPM2011-148 LQE2011-122 pp.131-134 |
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