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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2012-01-12
16:25		 Tokyo Kikai-Shinko-Kaikan Bldg High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164		 A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] ED2011-141 MW2011-164
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