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SDM 2023-06-26
10:50		 Hiroshima Hiroshima Univ. (Res. Inst. of Nanodevices) [Memorial Lecture] Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28		 Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] SDM2023-28
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