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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2015-01-16 11:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement of RF performance of GaN-HEMT on silicon substrate Isao Makabe, Hiroyuki Ichikawa, Keiichi Yui, Tsuyoshi Kouchi, Kazutaka Inoue, Ken Nakata (SEI)  ED2014-128 MW2014-192 |
[more] | ED2014-128 MW2014-192 pp.65-70 |
| LQE, CPM, EMD, OPE, R | 2012-08-23 14:15 |
Miyagi | Tohoku Univ. | Improvement in reliability of AlGaInAs edge-emitting laser diodes Hiroyuki Ichikawa, Yasuo Yamasaki, Nobuyuki Ikoma (SEI) R2012-27 EMD2012-33 CPM2012-58 OPE2012-65 LQE2012-31 |
High-speed and high-temperature operations are required for light emitters in optical communication systems. AlGaInAs la... [more] | R2012-27 EMD2012-33 CPM2012-58 OPE2012-65 LQE2012-31 pp.33-36 |
| LQE, OPE, OCS | 2010-10-29 15:30 |
Fukuoka | Mojiko Retro Town, Minato house | High Reliable AlGaInAs Lasers by Improved Facet-Coating Processes Hiroyuki Ichikawa, Chie Fukuda, Shinji Matsukawa, Nobuyuki Ikoma (SEI) OCS2010-83 OPE2010-119 LQE2010-92 |
AlGaInAs lasers are suitable for element devices of optical communication systems. However, degradations in forward-bias... [more] | OCS2010-83 OPE2010-119 LQE2010-92 pp.157-162 |
| CPM, OPE, R | 2010-04-16 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Reduction in Facet Temperature of AlGaInAs Edge-Emitting Lasers Hiroyuki Ichikawa, Nobuyuki Ikoma (SEI) R2010-4 CPM2010-4 OPE2010-4 |
AlGaInAs edge-emitting lasers have been expected for element devices for optical communication systems. However, increas... [more] | R2010-4 CPM2010-4 OPE2010-4 pp.17-22 |
| LQE | 2009-12-11 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Relationship between Facet Stress and Reliability of Edge-Emitting AlGaInAs Laser Diodes Hiroyuki Ichikawa, Akiko Kumagai, Naoya Kono, Shinji Matsukawa, Chie Fukuda, Keiko Iwai, Nobuyuki Ikoma (Sumitomo Electric Industries, Ltd.) LQE2009-142 |
Although facet stress is one of the important parameters in edge-emitting laser diodes (LDs), the relationship between f... [more] | LQE2009-142 pp.19-23 |
| LQE, OPE | 2009-06-19 16:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 1.3um AlGaInAs/InP DFB Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer Hideki Yagi, Yutaka Onishi, Yukihiro Tsuji, Hiroyuki Ichikawa, Hiroyuki Yoshinaga, Toshio Nomaguchi, Kenji Hiratsuka, Katsumi Uesaka (Sumitomo Electric Ind, LTD.) OPE2009-27 LQE2009-30 |
1.3um AlGaInAs/InP distributed feedback (DFB) lasers with the ridge-waveguide structure buried by the benzocyclobutene (... [more] | OPE2009-27 LQE2009-30 pp.59-62 |
| OPE, CPM, R | 2009-04-17 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Electrostatic-Discharge Tolerance of AlGaInAs Laser Diodes Hiroyuki Ichikawa, Chie Fukuda, Shinji Matsukawa, Kotaro Hamada, Nobuyuki Ikoma, Takashi Nakabayashi (Sumitomo Electric Industries, Ltd.) R2009-2 CPM2009-2 OPE2009-2 |
This is a report on electrostatic discharge (ESD)-induced degradation of AlGaInAs/InP laser diodes. We found that the do... [more] | R2009-2 CPM2009-2 OPE2009-2 pp.7-10 |
| CPM, OPE, R | 2007-04-20 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Degradation analysis of GaInAsP/InP laser diode Hiroyuki Ichikawa, Masashi Ito, Chie Fukuda, Kotaro Hamada, Akira Yamaguchi, Takashi Nakabayashi (Sumitomo Electric Industries) R2007-6 CPM2007-6 OPE2007-6 |
ESD-induced degradation is one of the serious reliability problems of GaInAsP/InP LD. We have conducted an analysis on E... [more] | R2007-6 CPM2007-6 OPE2007-6 pp.29-33 |
| OPE, R, CPM | 2005-04-22 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Degradation analysis of GaInAsP/InP laser diodes Kotaro Hamada, Hiroyuki Ichikawa, Shinji Matsukawa, Takashi Nakabayashi, Akira Yamaguchi, Takashi Kato (Sumitomo Electric) |
[more] | R2005-3 CPM2005-3 OPE2005-3 pp.11-15 |
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