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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, ED, CPM |
2011-11-17 15:40 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Fabrication of AlGaN/GaN E-mode HFETs with Enhanced Barrier Structures Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada (NTT) ED2011-83 CPM2011-132 LQE2011-106 |
In recessed-gate AlGaN/GaN Heterostructure field-effect transistors (HFETs) for E-mode operation, enhanced-barrier struc... [more] |
ED2011-83 CPM2011-132 LQE2011-106 pp.49-54 |
ED, MW |
2010-01-14 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) ED2009-187 MW2009-170 |
[more] |
ED2009-187 MW2009-170 pp.71-76 |
SDM, ED |
2009-06-25 09:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66 |
We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consistin... [more] |
ED2009-71 SDM2009-66 pp.93-98 |
ED |
2009-06-11 16:25 |
Tokyo |
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Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 |
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] |
ED2009-42 pp.31-36 |
LQE, ED, CPM |
2008-11-28 14:55 |
Aichi |
Nagoya Institute of Technology |
Flat Surface and High Electron Mobility of InAlN/AlGaN/AlN/GaN Heterostructures Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi (NTT) ED2008-180 CPM2008-129 LQE2008-124 |
We fabricated InxAl1-xN/Al0.38Ga0.62N/AlN/GaN hetero-structures with flat surfaces and high electron mobility. The densi... [more] |
ED2008-180 CPM2008-129 LQE2008-124 pp.141-144 |
MW, ED |
2005-01-18 09:45 |
Tokyo |
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- Narihiko Maeda, -, Takashi Makimura, Masanobu Hiroki, Toshiki Makimoto, Takashi Kobayashi, Takatomo Enoki (NTT) |
[more] |
ED2004-213 MW2004-220 pp.7-12 |
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