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 Results 21 - 26 of 26 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2009-01-15
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs
Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2008-211 MW2008-176		 InP-based high electron mobility transistors (HEMTs) have been developed for microwave and millimeter-wave ICs. By scali... [more] ED2008-211 MW2008-176
pp.77-81
ED 2008-12-20
10:45		 Miyagi Tohoku Univ. [Invited Talk] Emission and detection using two dimensional plasma oscillations in nanometer transistors and their applications to terahertz imaging
Abdelouahad El Fatimy, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), P. Mounaix, J. C. Delagnes (Univ. Bordeaux), Wojciech Knap, Nina Dyakonova (Univ. Montpellier2) ED2008-194		 We present recent results on terahertz emission/detection utilizing two-dimensional plasmons in different types of InGaA... [more] ED2008-194
pp.47-52
ED 2008-12-20
11:25		 Miyagi Tohoku Univ. Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's
Nobuhiro Magome, Takuya Nishimura (Tohoku Univ.), Irina Khmyrova (Univ. of Aizu), Tetsuya Suemitsu (Tohoku Univ.), Wojtek Knap (Univ. Montpellier2), Taiichi Otsuji (Tohoku Univ.) ED2008-195		 Influence of fringing electric field due to nonideality of the gate-two-dimensional electron gas (2DEG) channel capacita... [more] ED2008-195
pp.53-58
ED 2007-11-27
17:20		 Miyagi Tohoku Univ. Research Institute of Electrical Communication Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure
Hiroyuki Handa, Yohei Hosono, Hiroki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2007-195		 We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emissi... [more] ED2007-195
pp.45-50
ED, MW 2006-01-19
14:45		 Tokyo Kikai-Shinko-Kaikan Bldg. 0.15-mm-dual-gate AlGaN/GaN HEMT mixers
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) 		 [more] ED2005-206 MW2005-160
pp.41-44
LQE, ED, CPM 2005-10-13
13:50		 Shiga Ritsumeikan Univ. Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) 		 [more] ED2005-127 CPM2005-114 LQE2005-54
pp.43-46
 Results 21 - 26 of 26 [Previous]  /   
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