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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-10-17
10:00
Miyagi Niche, Tohoku Univ. Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation
Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-89
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si3N4/Si interface were ... [more] SDM2014-89
pp.31-34
SDM 2010-10-22
14:50
Miyagi Tohoku University Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals
Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI) SDM2010-167
The chemical and electronic-band structures of SiO2/Si interfaces formed utilizing oxygen radicals were investigated by ... [more] SDM2010-167
pp.61-65
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