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Committee Date Time Place Paper Title / Authors Abstract Paper #
OME, SDM 2024-04-20
16:50		 Kagoshima AMA Home Plaza [Invited Talk] ReRAM/OFET integration process utilizing LaBxNy/N-doped LaB6 stacked structure
Shun-ichiro Ohmi, Jiaang Zhao (Tokyo Tech) SDM2024-7 OME2024-7		  [more] SDM2024-7 OME2024-7
pp.24-27
SDM 2023-10-13
17:00		 Miyagi Niche, Tohoku Univ. A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure
Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) SDM2023-61		 LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] SDM2023-61
pp.46-49
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