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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2014-01-16 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
2D Device Simulation of AlGaN/GaN HFETs Side-Gating Effect Yusuke Ikawa (Univ. of Tokushima), Keunsam Lee (Nihon Synopsys), Jin-Ping Ao (Univ. of Tokushima), Yasuo Ohno (e-Device) ED2013-118 MW2013-183 |
[more] |
ED2013-118 MW2013-183 pp.47-52 |
ED |
2012-07-26 13:55 |
Fukui |
Fukui University |
Measurement of Channel Electron Mobility in AlGaN/GaN MISHFET Kentaro Tamai, Jin-Ping Ao (Tokushima Univ.), Daigo Kikuta (Toyota Central R&D Labs., Inc.), Masahiro Sugimoto (Toyota Motor Corporation), Yasuo Ohno (Tokushima Univ.) ED2012-42 |
[more] |
ED2012-42 pp.5-9 |
LQE, ED, CPM |
2011-11-17 15:15 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105 |
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] |
ED2011-82 CPM2011-131 LQE2011-105 pp.43-48 |
AP, WPT (Joint) |
2011-10-12 15:25 |
Kanagawa |
Kanagawa Womens Center |
Microwave Power Transmission Using Open-Ring Resonator Coupling and GaN SBD Kenji Harauchi, Yuichi Iwasaki, Kohei Hayashino, Jin-Ping Ao (Univ.Tokushima), Naoki Shinohara (Kyoto Univ.), Hiroshi Tonomura (UD Trucks), Yasuo Ohno (Univ.Tokushima) |
Experiments on wireless power transmission by microwave are carried out to develop the battery charging of mobile equip... [more] |
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ED, LQE, CPM |
2009-11-20 11:20 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130 |
Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] |
ED2009-151 CPM2009-125 LQE2009-130 pp.109-114 |
ED, LQE, CPM |
2009-11-20 15:25 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.) ED2009-158 CPM2009-132 LQE2009-137 |
For microwave power rectification circuits(rectenna), high power, high conversion efficiency and compact size rectifying... [more] |
ED2009-158 CPM2009-132 LQE2009-137 pp.145-150 |
ED |
2009-07-30 15:50 |
Osaka |
Osaka Univ. Icho-Kaikan |
Current Control of Open-Gate AlGaN/GaN HFET via Electrolyte Kenji Nozaki, Yoshiya Takahashi, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ.) ED2009-107 |
(To be available after the conference date) [more] |
ED2009-107 pp.29-32 |
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