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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2023-01-30 14:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
[Invited Talk]
Design guidlines for SBD integration into SiC-MOSFET breaking RonA- diode conduction capability trade-off Shunsuke Asaba, Masaru Furukawa, Yuji Kusumoto (Toshiba D&S), Ryosuke Iijima (Toshiba), Hiroshi Kono (Toshiba D&S) SDM2022-82 |
Degradation in performance due to the bipolar current through parasitic diode during reverse operation of SiC-MOSFET can... [more] |
SDM2022-82 pp.13-16 |
ICD, SDM |
2005-08-19 10:00 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
[Special Invited Talk]
HfSiON
-- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue -- Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba) |
The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t... [more] |
SDM2005-146 ICD2005-85 pp.19-24 |
ICD, SDM |
2005-08-19 10:45 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
HfSiON Gate Dielectrics Design for Mixed Signal CMOS Kenji Kojima, Ryosuke Iijima, Tatsuya Ohguro, Takeshi Watanabe, Mariko Takayanagi, Hisayo S. Momose, Kazunari Ishimaru, Hidemi Ishiuchi (TOSHIBA) |
(Advance abstract in Japanese is available) [more] |
SDM2005-147 ICD2005-86 pp.25-30 |
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