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Committee Date Time Place Paper Title / Authors Abstract Paper #
EST, EMCJ, IEE-EMC [detail] 2012-10-26
11:20		 Miyagi Tohoku Gakuin University(Tagajo Campus) Improvement of breakdown voltage for Self-biased Channel Diode by deep boron ion implantation
Tsugutomo Kudoh (Kanagawa Int. of Tech.), Fumihiko Sugawara, Kouichi Ohnuma (Tohoku-Gakuin Univ.) EMCJ2012-79 EST2012-63		 We have previously proposed a DMOS self-biased channel diode incorporating a self-bias effect in a channel diode with th... [more] EMCJ2012-79 EST2012-63
pp.93-97
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