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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2015-06-19 14:15 |
Aichi |
VBL, Nagoya Univ. |
Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 |
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] |
SDM2015-48 pp.51-55 |
SDM |
2013-06-18 10:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Germanide formation in metal/high-k/Ge gate stacks and its impact on electrical properties Takuji Hosoi, Iori Hideshima, Yuya Minoura, Ryohei Tanaka (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2013-47 |
[more] |
SDM2013-47 pp.19-23 |
SDM |
2012-06-21 10:20 |
Aichi |
VBL, Nagoya Univ. |
High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47 |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] |
SDM2012-47 pp.23-26 |
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