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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2007-04-12
11:10		 Oita   [Invited Talk] A 512kB Embedded Phase Change Memory with 416kB/s Write Throughput at 100μA Cell Write Current
Akira Kotabe, Satoru Hanzawa (Hitachi), Naoki Kitai (Hitachi ULSI), Kenichi Osada, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura (Hitachi), Masahiro Moniwa (Renesas), Takayuki Kawahara (Hitachi) ICD2007-5		 An experimental 512-kB embedded Phase Change Memory (PCM) is developed in a 0.13-μm 1.5-V CMOS technology. Three circuit... [more] ICD2007-5
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