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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2018-05-25
11:35		 Kyoto Doshisha Univ. A 28GHz 4-Channel Transmit/Receive RF Core-Chip for High SHF Wide-band Massive MIMO in 5G
Wataru Yamamoto, Koji Tsutsumi, Takaya Maruyama, Takanobu Fujiwara, Tatsuya Hagiwara, Ai Osawa, Mitsuhiro Shimozawa (Mitsubishi Electric Co.) MW2018-17		  [more] MW2018-17
pp.39-43
RCS 2017-06-23
15:10		 Okinawa Ishigaki Shoukou Kaikan Proposal of CQI Table Switching Control for Cell Range Expansion in HetNet
Norihiro Naganuma, Kai Osawa, Hiroyuki Otsuka (Kogakuin Univ.) RCS2017-90		 Higher-order modulation such as 256-quadrature amplitude modulation (QAM) is a key technology to increase data rates wit... [more] RCS2017-90
pp.239-244
RCS 2017-06-23
15:35		 Okinawa Ishigaki Shoukou Kaikan Throughput Performance of 256-QAM using different types of MCS in small cells
Kai Osawa, Norihiro Naganuma, Hiroyuki Otsuka (Kogakuin Univ.) RCS2017-91		 Higher-order modulation is a key technology to increase data rates within a limited bandwidth. This paper describes the ... [more] RCS2017-91
pp.245-250
RCS, SR, SRW
(Joint)		 2017-03-03
17:50		 Tokyo Tokyo Institute of Technology The Design of Small Cell Based on Macro/Micro Cells Parameters and Consideration for256-QAM to Small Cells
Kazuya Fujiwara, Kai Osawa, Norihiro Naganuma, Hiroyuki Otsuka (Kogakuin Univ.) RCS2016-337		 This paper presents the design of small cells based on the parameters of existing micro and/or micro cell systems, and p... [more] RCS2016-337
pp.271-276
SDM 2013-12-13
17:00		 Nara NAIST A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides
Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-132		 4H-SiC MOSFETs are expected as low loss power devices with high blocking voltage. Threshold voltage instability is one o... [more] SDM2013-132
pp.97-100
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