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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
12:00		 Aichi Nagoya Univ. VBL3F Influence of native oxide layer on electrical characteristics of Al2O3/n-GaN capacitors
Kazuya Yuge (SIT), Toshihide Nabatame, Yoshihiro Yoshikawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide (NIMS), Tomoji Ohishi (SIT) SDM2018-19		 In this study, the effects of the native oxide interfacial layer (Ga$_2$O$_3$) on the fixed charge and dipole formation ... [more] SDM2018-19
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