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ED 2011-07-29
13:30		 Niigata Multimedia system center, Nagaoka Univ. of Tech. Effect of C and Si co-doping high resistivity GaN buffer layer on AlGaN/GaN HFETs
Masayuki Fukai, Shusuke Kakizawa, Hiroshi Fushimi (New Japan Radio) ED2011-37		 Based on Fermi level effect, we intentionally incorporated carbon into Si-doped GaN by low-temperature grown MOVPE at 95... [more] ED2011-37
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