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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2007-11-17
10:15		 Niigata Nagaoka University of Technology Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias.
Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118		 Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the... [more] CPM2007-118
pp.69-72
ED, CPM, LQE 2006-10-06
16:00		 Kyoto   Direct nitridation of SiC surface and characterization of nitride layer by XPS
Tetsuo Yamaguchi, Yoshiki Ishida, Chen Chen, Masataka Hagihara, Rinpei Hayashibe, Tomohiko Yamakami, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) 		 [more] ED2006-173 CPM2006-110 LQE2006-77
pp.113-116
CPM 2005-11-11
15:10		 Fukui   Characterization of insulating nitride films grown on 6H-SiC by plasma nitridation method
Tetsuo Yamaguchi, YingShen Liu, Yoshiki Ishida, Tomohiko Yamakami, Rinpei Hayashibe, Katsuya Abe, Kiichi Kamimura (Shinshu Univ.) 		The quality of SiC-MOS devices has been critically limited by carbon related defects in the SiC oxide film grown by ther... [more] CPM2005-156
pp.25-28
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