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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-12-17
14:30		 Kyoto Kyoto Univ. (Katsura) Change of majority carrier density in 4H-SiC epilayer by 200keV electron irradiation
Takunori Nojiri, Kozo Nishino, Hideki Yanagisawa, Hideharu Matsuura (Osaka Electro-Communication Univ.), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2010-195		 The temperature dependencies of the majority-carrier concentrations in Al-doped 4H-SiC or N-doped 4H-SiC epilayers with ... [more] SDM2010-195
pp.57-62
SDM 2009-12-04
10:00		 Nara NAIST Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion
Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-153		 In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were ... [more] SDM2009-153
pp.11-16
SDM 2009-12-04
10:20		 Nara NAIST Research on Radiation Resistance in SiC Epilayer by 200 keV Electron Irradiation. -- dopant-density dependence --
Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-154		 We investigate the effect of 200 keV electron irradiation that only displaces C atoms in SiC on the majority-carrier con... [more] SDM2009-154
pp.17-22
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