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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2015-08-11
11:20		 Aomori   Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD
Hidefumi Narita (Hirosaki Univ.), Daichi Yamada, Yukio Fukuda (Tokyo Univ. of Science, Suwa), Yosuke Kanuka, Hiroshi Okamoto (Hirosaki Univ.) CPM2015-44		 A Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, improvement of th... [more] CPM2015-44
pp.67-70
CPM 2011-08-10
16:35		 Aomori   Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature
Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-64		 Ge-MIS structures have attracted the attention for next generation device, which may take the place of Si-MOS devices. H... [more] CPM2011-64
pp.43-46
CPM 2011-08-10
17:00		 Aomori   Evaluation of Ge-MIS structure fabricated by ECR plasma techniques by DLTS and C-t measurement
Shinya Sato, Takuro Iwasaki, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-65		 In recent years, a Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, ... [more] CPM2011-65
pp.47-50
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