Paper Abstract and Keywords |
Presentation |
2011-08-10 16:35
Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-64 Link to ES Tech. Rep. Archives: CPM2011-64 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge-MIS structures have attracted the attention for next generation device, which may take the place of Si-MOS devices. However, further improvement of the interface quality is desired for the Ge-MIS structure. We have reported that the Ge-MIS structure with low interface state density can be made by ECR (Electron Cyclotron Resonance) plasma technique, and that the interface state density of Ge-MIS structure can be evaluated by the characteristic analysis in the inversion region even at room temperature. In this report, we evaluated the interface state density of Ge-MIS structure by combination of conductance technique at low temperature and the characteristic analysis at room temperature. We have successfully obtained the interface state density in the upper half and the lower half of the band gap. The measured interface state density near the middle of the band gap is in a level of 1x10^{11}cm^{-2}eV^{-1}, which is a excellent value for p-type Ge-MIS structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge / Ge-MIS / MIS / Interface State / Conductance Technique / / / |
Reference Info. |
IEICE Tech. Rep., vol. 111, no. 176, CPM2011-64, pp. 43-46, Aug. 2011. |
Paper # |
CPM2011-64 |
Date of Issue |
2011-08-03 (CPM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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CPM2011-64 Link to ES Tech. Rep. Archives: CPM2011-64 |
Conference Information |
Committee |
CPM |
Conference Date |
2011-08-10 - 2011-08-11 |
Place (in Japanese) |
(See Japanese page) |
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Topics (in Japanese) |
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Paper Information |
Registration To |
CPM |
Conference Code |
2011-08-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature |
Sub Title (in English) |
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Keyword(1) |
Ge |
Keyword(2) |
Ge-MIS |
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MIS |
Keyword(4) |
Interface State |
Keyword(5) |
Conductance Technique |
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1st Author's Name |
Takuro Iwasaki |
1st Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
2nd Author's Name |
Shinya Sato |
2nd Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
3rd Author's Name |
Soitiro Suzuki |
3rd Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
4th Author's Name |
Toshiro Ono |
4th Author's Affiliation |
Hirosaki University (Hirosaki Univ.) |
5th Author's Name |
Yukio Fukuda |
5th Author's Affiliation |
Tokyo University of Science, Suwa (Tokyo Univ. of Science, Suwa,) |
6th Author's Name |
Hiroshi Okamoto |
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Hirosaki University (Hirosaki Univ.) |
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Speaker |
Author-1 |
Date Time |
2011-08-10 16:35:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
CPM2011-64 |
Volume (vol) |
vol.111 |
Number (no) |
no.176 |
Page |
pp.43-46 |
#Pages |
4 |
Date of Issue |
2011-08-03 (CPM) |
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