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Presentation 2011-08-10 16:35
Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature
Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-64 Link to ES Tech. Rep. Archives: CPM2011-64
Abstract (in Japanese) (See Japanese page) 
(in English) Ge-MIS structures have attracted the attention for next generation device, which may take the place of Si-MOS devices. However, further improvement of the interface quality is desired for the Ge-MIS structure. We have reported that the Ge-MIS structure with low interface state density can be made by ECR (Electron Cyclotron Resonance) plasma technique, and that the interface state density of Ge-MIS structure can be evaluated by the characteristic analysis in the inversion region even at room temperature. In this report, we evaluated the interface state density of Ge-MIS structure by combination of conductance technique at low temperature and the characteristic analysis at room temperature. We have successfully obtained the interface state density in the upper half and the lower half of the band gap. The measured interface state density near the middle of the band gap is in a level of 1x10^{11}cm^{-2}eV^{-1}, which is a excellent value for p-type Ge-MIS structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / Ge-MIS / MIS / Interface State / Conductance Technique / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 176, CPM2011-64, pp. 43-46, Aug. 2011.
Paper # CPM2011-64 
Date of Issue 2011-08-03 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee CPM  
Conference Date 2011-08-10 - 2011-08-11 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Paper Information
Registration To CPM 
Conference Code 2011-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) Ge-MIS  
Keyword(3) MIS  
Keyword(4) Interface State  
Keyword(5) Conductance Technique  
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Keyword(8)  
1st Author's Name Takuro Iwasaki  
1st Author's Affiliation Hirosaki University (Hirosaki Univ.)
2nd Author's Name Shinya Sato  
2nd Author's Affiliation Hirosaki University (Hirosaki Univ.)
3rd Author's Name Soitiro Suzuki  
3rd Author's Affiliation Hirosaki University (Hirosaki Univ.)
4th Author's Name Toshiro Ono  
4th Author's Affiliation Hirosaki University (Hirosaki Univ.)
5th Author's Name Yukio Fukuda  
5th Author's Affiliation Tokyo University of Science, Suwa (Tokyo Univ. of Science, Suwa,)
6th Author's Name Hiroshi Okamoto  
6th Author's Affiliation Hirosaki University (Hirosaki Univ.)
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Speaker Author-1 
Date Time 2011-08-10 16:35:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2011-64 
Volume (vol) vol.111 
Number (no) no.176 
Page pp.43-46 
#Pages
Date of Issue 2011-08-03 (CPM) 


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