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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, CPSY, CAS 2017-12-15
09:50		 Okinawa Art Hotel Ishigakijima A 60GHz Integrated Antenna Switch for TDD Transceivers in 65nm CMOS
Korkut Kaan Tokgoz, Seitaro Kawai, Kenichi Okada, Akira Matsuzawa (Tokyo Tech.) CAS2017-102 ICD2017-90 CPSY2017-99		 In this work, an integrated antenna switching architecture is presented for time-division-duplex millimeter-wave transce... [more] CAS2017-102 ICD2017-90 CPSY2017-99
pp.151-153
MW 2011-10-21
09:25		 Tokyo The University of Electro-Communications A Capacitance Compensated Two-Stage Series PIN Diode SPDT High Frequency Switch
Kensaku Takahashi, Iwata Sakagami, Shingo Okamura, Xiaolong Wang, Minoru Tahara (Univ. of Toyama) MW2011-101		 High-frequency switches can be used in wireless communication equipments where low insertion loss and high isolation are... [more] MW2011-101
pp.83-88
EST 2011-10-07
15:45		 Nagasaki Nagasaki Prefectural Art Museum Slot-Ring SPDT Switch Circuit using Both-Sided MIC Technology
Yu Ushijima, Eisuke Nishiyama, Masayoshi Aikawa (Saga Univ.) EST2011-81		 In this paper, a slot-ring SPDT switch circuit using the Both-Sided MIC Technology is proposed. The proposed switch cir... [more] EST2011-81
pp.91-94
ED 2008-12-19
15:30		 Miyagi Tohoku Univ. 60GHz High Isolation SPDT MMIC Switches.
Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2008-188		 This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In... [more] ED2008-188
pp.21-25
MW, ED 2005-01-18
13:25		 Tokyo   5W-1.9 GHz-SPDT Switch Using AlGaN/GaN HEMTs
Mayumi Hirose, Yoshiharu Takada, Masahiko Kuraguchi, Tadahiro Sasaki, Takashi Suzuki, Kunio Tsuda (Toshiba) 		A 5W-SPDT switch operating at 1.9 GHz was fabricated using undoped AlGaN/GaN HEMTs. In the HEMT structure, the undoped ... [more] ED2004-219 MW2004-226
pp.41-45
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