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SDM 2008-06-10
12:45		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface
Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA) SDM2008-53		 The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by... [more] SDM2008-53
pp.65-70
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