Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
[TOP] | [2006] | [2007] | [2008] | [2009] | [2010] | [2011] | [2012] | [Japanese] / [English]
ICD2005-1
A Read-Static-Noise-Margin-Free SRAM cell for low-Vdd and High-speed applications
Koichi Takeda, Yasuhiko Hagihara (NEC), Yoshiharu Aimoto (NECEL), Masahiro Nomura, Yoetsu Nakazawa (NEC), Toshio Ishii, Hiroyuki Kobatake (NECEL)
pp. 1 - 6
ICD2005-2
Low-Power Embedded SRAM Modules with Expanded Margins for Writing
Masanao Yamaoka (Hitachi, Ltd.), Noriaki Maeda (Renesas), Yoshihiro Shinozaki (Hitachi ULSI), Yasuhisa Shimazaki, Koji Nii, Shigeru Shimada, Kazumasa Yanagisawa (Renesas), Takayuki Kawahara (Hitachi, Ltd.)
pp. 7 - 12
ICD2005-3
A 256Mb Synchronous Burst DDR SRAM using Single-crystal Silicon Thin Film Transisitor (SSTFT) SRAM cell
Youngho Suh, Hyouyoun Nam, Youngdae Lee, Hungiun An, Sangbeom Kang, Byunggil Choi, Hoon Lim, Choongkeun Kwak, Hyunguen Byun (Samsung)
pp. 13 - 17
ICD2005-4
[Invited Talk]
DRAM in the Nanoscale Era
-- Non-1T1C approaches --
Tomoyuki Ishii (Hitachi)
pp. 19 - 22
ICD2005-5
A 128Mb DRAM Using a 1T Gain Cell(FBC) on SOI
Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda (Toshiba), Tomoki Higashi (Toshiba Microelectronics), Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe (Toshiba)
pp. 23 - 28
ICD2005-6
[Invited Talk]
*
Hiroyuki Yamauchi (Matsushita)
pp. 29 - 34
ICD2005-7
A 196-mm2, 2-Gb DDR2 SDRAM using an 80-nm Triple Metal Technology
Jeong Hoon kook, Kyehyun Kyung, Chiwook Kim, Jaeyoung Lee (Samsung)
pp. 35 - 36
ICD2005-8
[Invited Talk]
Statistical Integration In Multigigabit DRAM Design
Tomonori Sekiguchi, Satoru Akiyama (Hitachi), Kazuhiko Kajigaya (Elpida), Satoru Hanzawa, Riichiro Takemura, Takayuki Kawahara (Hitachi)
pp. 37 - 42
ICD2005-9
Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
Hyung-rok Oh, Beak-hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung-gil Choi, Hye-jin Kim, Ki-sung Kim, Du-eung Kim, Choong-keun Kwak, Hyun-geun Byun, Gi-tae Jeong, Hong-sik Jeong, Kinam Kim (Samsung)
pp. 43 - 45
ICD2005-10
A 146mm2 8Gb NAND Flash Memory with 70nm CMOS Technology
Takumi Abe, Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka (Toshiba), Teruhiko Kamei, Hiroaki Nasu (SanDisk)
pp. 47 - 52
ICD2005-11
4Gb Multilevel AG-AND Flash Memory with 10MB/s Programming Throughput
Hideaki Kurata, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume (Hitachi), Kazuki Homma, Kenji Kozakai, Satoshi Noda, Teruhiko Ito, Masahiro Shimizu, Yoshihiro Ikeda, Osamu Tsuchiya, Kazunori Furusawa (RENESAS)
pp. 53 - 58
ICD2005-12
*
Katsuyuki Sato (Elpida), Hiroyuki Yamauchi (Matsushita), Kenji Numata (Toshiba), Takashi Akazawa (Renesas), Yasunao Katayama (IBM Japan)
p. 59