Print edition: ISSN 0913-5685
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ED2006-240
Physics-based SPICE modeling of triple barrier resonant tunneling diodes
Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.)
pp. 1 - 6
ED2006-241
Analysis on Resonant-Tunneling 4RTD Logic Gate Operation
Hiroki Okuyama, Kentaro Sugawara, Tomohiko Ebata, Takao Waho (Sophia Univ.)
pp. 7 - 12
ED2006-242
A resonant tunneling diode pair oscillator for high power operation
Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 13 - 16
ED2006-243
[Invited Talk]
SiGe Quantum Effect Devices
Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT)
pp. 17 - 22
ED2006-244
Theoretical analysis of fluoride-based intersubband transition lasers on Si substrate
Keisuke Jinen, Kaoru Uchida, Shinji Kodaira (Tokyo Inst. Tech.), Masahiro Watanabe, Masahiro Asada (Tokyo Inst. Tech./JST-SORST)
pp. 23 - 28
ED2006-245
Investigation of A Novel Logic Circuit Implementation Scheme Utilizing Topological Correlation between Logic Graph by Decision Diagram and Nanowire Network Structures
Seiya Kasai, Tatsuya Nakamura, Yuta Shiratori (Hokkaido Univ.)
pp. 29 - 34
ED2006-246
Single-electron device using Si nanodot array and multi-input gates
Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.)
pp. 35 - 40
ED2006-247
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Tetsuya Hirose, Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.)
pp. 41 - 45
ED2006-248
Dependency of spin-orbit interaction in InAs HEMT on electric field perpendicular to the channel
Takashi Matsuda, Kanji Yo (Hokkaido Univ.)
pp. 47 - 50
ED2006-249
Fabrication of epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film and a MgO tunnel barrier and their tunnel magnetoresistance characteristics
Takao Marukame, Takayuki Ishikawa, Kenichi Matsuda, Tetsuya Uemura, Masafumi Yamamoto (Hokkaido Univ.)
pp. 51 - 56
ED2006-250
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.)
pp. 57 - 62
ED2006-251
Transport property of nanographite patterned on Silicon dioxide
Keita Konishi, Takashi Matsuda, Youji Kan (Hokkaido Univ.)
pp. 63 - 66
ED2006-252
Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures
Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.)
pp. 67 - 71
ED2006-253
Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates
Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.)
pp. 73 - 77
ED2006-254
Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands
Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.)
pp. 79 - 82
ED2006-255
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Daniel Moraru (Shizuoka Univ.), Yukinori Ono (ＮＴＴ), Hiroshi Inokawa, Kiyohito Yokoi, Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.)
pp. 83 - 88
ED2006-256
Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors
-- Sensing the presence of a single-charge in the substrate --
Zainal Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.)
pp. 89 - 94
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.