Print edition: ISSN 0913-5685
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SDM2006-254
Ta2O5 Interfacial Layer between GST and W Plug enabling Low Power Operation of Phase Change Memories
Yuichi Matsui, Kenzo Kurotsuchi, Osamu Tonomura, Takahiro Morikawa, Masaharu Kinoshita, Yoshihisa Fujisaki, Nozomu Matsuzaki, Satoru Hanzawa, Motoyasu Terao, Norikatsu Takaura, Hiroshi Moriya, Tomio Iwasaki (Hitachi), Masahiro Moniwa, Tsuyoshi Koga (Renesas)
pp. 1 - 6
SDM2006-255
Reset switching mechanism of ReRAM using thermal reaction model
Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.)
pp. 7 - 10
SDM2006-256
SiO2/SiOx/SiC/Si MIS Resistive Nonvolatile Memory
Yoshiyuki Suda, Hiromi Hasegawa (Tokyo Univ. of Agric. & Technol.)
pp. 11 - 14
SDM2006-257
Impact of three-dimensional transistor on the pattern area reduction for high density ULSI
Shigeyoshi Watanabe, Keisuke Okamoto, Yuu Hiroshima, Ｋｅｉｓｕｋｅ Ｋｏｉｚｕｍｉ, Makoto Oya (SIT)
pp. 15 - 20
SDM2006-258
[Invited Talk]
(111)-Oriented SrRuO3/Pt Bottom Electrode for Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3 Films for High Density Ferroelectric Random Access
Niclus Menou (Tokyo Inst. of Tech.), Hiroki Kuwabara, Hiroshi Funakubo (Tokyo Tech.)
pp. 21 - 26
SDM2006-259
Key Process Technology of Reliable Sub Micron Capacitor for High Density Chain-FeRAM
Koji Yamakawa, Tohru Ozaki, Hiroyuki Kanaya, Iwao Kunishima, Yoshinori Kumura, Yoshiro Shimojo, Susumu Shuto, Osamu Hidaka, Yuki Yamada, Soi chi Yamazaki, Takeshi Hamamoto, Shinichiro Shiratake, Daisaburo Takashima, Tadashi Miyakawa, Sumito Ohtsuki (Toshiba)
pp. 27 - 32
SDM2006-260
Development of Microwave-Excited Plasma Enhanced Metal-Organic Chemical Vapor deposition System and Formation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Film
Ichirou Takahashi, Kiyoshi Funawa, Keita Azumi, Satoru Yamashita, Yasuyuki Shirai, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)
pp. 33 - 37
SDM2006-261
Design method of low-power dual-supply-voltage system LSI taking into account various leakage current of MOSFET
Shigeyoshi Watanabe, Satoshi Hanami, Manabu Kobayashi, Toshinori Takabatake (SIT)
pp. 39 - 44
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.