Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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LQE2008-128
High power 1.3μm 25Gbps Electro-absorption Modulator integrated LD
Hiroyuki Takahashi (Oki Electric Industry Co.,Ltd.), Tomonori Shimamura, Takashi Sugiyama, Munechika Kubota (Oki Semiconductor Co.,Ltd.), Koji Nakamura (Oki Electric Industry Co.,Ltd.)
pp. 1 - 4
LQE2008-129
Modehop-free Wavelength Tuning over 50 nm of Micromechanically Tunable InP-Based VCSELs with Si-MEMS Technology
Tetstuo Yano, Hiroki Saito, Nobuhiko Kanbara, Ryuichirou Noda, Shin-ichirou Tezuka, Naoyuki Fujimura, Masaya Ooyama, Tetsuya Watanabe, Takaaki Hirata (Yokogawa Electric Corporation), Nobuhiko Nishiyama (Tokyo Institute of Technology)
pp. 5 - 9
LQE2008-130
Indirect pump scheme for quantum cascade lasers
-- Dynamical of electron-transport and very high T0-Values --
Kazuue Fujita, Masamichi Yamanishi, Tadataka Edamura, Atsushi Sugiyama, Takahide Ochiai, Shinichi Furuta, Naota Akikusa, Hirofumi Kan (Hamamatsu Photonics k.k.)
pp. 11 - 15
LQE2008-131
[Invited Talk]
Report on 21st IEEE International Semiconductor Laser Conference (ISLC 2008)
Shinji Tsuji (Hitachi Ltd.)
pp. 17 - 22
LQE2008-132
QD DFB Laser at 1.3μm
-- Using high density QD and HEM structure --
Takeru Amano, Keishiro Goshima (National Inst. of Adv Ind Sci and Tech.), Takeyoshi Sugaya (AIST), Kazuhiro Komori, Masahiko Mori (National Inst. of Adv Ind Sci and Tech.)
pp. 23 - 26
LQE2008-133
Simultaneous temporal and spatial focusing by diffractive lens
Satoshi Yamashita (Univ. of Toskuhima), Satoshi Hasegawa, Yoshio Hayasaki (Utsunomiya Univ.)
pp. 27 - 30
LQE2008-134
[Encouragement Talk]
Recent Advancements for the Semiconductor Double-ring-resonator-coupled Laser
Toru Segawa, Shinji Matsuo, Takaaki Kakitsuka, Tomonari Sato, Yasuhiro Kondo, Hiroyuki Suzuki, Ryo Takahashi (NTT Co.)
pp. 31 - 36
LQE2008-135
Semiconductor Lasers with Optical Antiguiding Layers for Horizontal Transverse Modes
Hazuki Yoshida, Naoki Shomura, Takahiro Numai (Ritsumeikan Univ.)
pp. 37 - 42
LQE2008-136
Spectral Linewidth Reduction in Tunable DFB Laser Array (TLA)
Hiroyuki Ishii, Kazuo Kasaya, Hiromi Oohashi (NTT)
pp. 43 - 46
LQE2008-137
Lateral current injection type GaInAsP laser on Semi-insulating Substrate for Semiconductor Membrane Laser
Tadashi Okumura (Tokyo tech), Munetaka Kurokawa (Tokyo Inst. of Tech), Mizuki Shirao, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo tech)
pp. 47 - 52
LQE2008-138
Development of II-VI materials on InP substrates for green semiconductor laser diodes
Ichirou Nomura, Katsumi Kishino, Tomoya Ebisawa, Shun Kushida, Kunihiko Tasai, Hitoshi Nakamura, Tsunenori Asatsuma, Hiroshi Nakajima (Sophia Univ.)
pp. 53 - 58
LQE2008-139
638nm Single Lateral Mode Laser Diode for Micro-Projector Application
Makoto Yukawa, Naoyuki Shimada, Kimitaka Shibata, Junichi Horie, Kenichi Ono, Tetsuya Yagi (Mitsubishi Electric Co. Electric)
pp. 59 - 62
LQE2008-140
High Speed Direct Modulation of 1.3-μm AlGaInAs Multiple-Quantum-Well DFB Lasers with Semi-Insulating Current-Blocking Layers
Koji Otsubo, Manabu Matsuda, Kan Takada, Shigekazu Okumura, Mitsuru Ekawa (Fujitsu Labs. Ltd.), Hiromasa Tanaka (Fujitsu Ltd.), Satoshi Ide (Fujitsu Labs. Ltd.), Kazuyuki Mori (Fujitsu Ltd.), Tsuyoshi Yamamoto (Fujitsu Labs. Ltd.)
pp. 63 - 68
LQE2008-141
Microdisk Quantum Cascade Laser with an Integrated Optical Waveguide
Yuki Wakayama (INOIE, Univ. of Tokyo), Satoshi Iwamoto, Yasuhiko Arakawa (RCAST, Univ. of Tokyo)
pp. 69 - 72
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.