Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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MW2009-157
Design of a Compact UWB Bandpass Filter Using a Microstrip Five-Mode Step-Impedance Resonator
Akihito Beppu, Zhewang Ma (Saitama Univ.), Chun-Ping Chen, Tetsuo Anada (Kanagawa Univ.), Yoshio Kobayashi (Saitama Univ.)
pp. 1 - 6
MW2009-158
BIT Line Filter Consisting of FR-4 Substrate at 30GHz
Yusuke Omote, Futoshi Kuroki (KNCT)
pp. 7 - 10
MW2009-159
Evaluation of the phase disaplacement delta by the complex permittivity measuring with resonators
Jun-ichi Sugiyama (AIST)
pp. 11 - 16
MW2009-160
Wide-band spurious-response suppression using 4-pole coplanar-waveguide resonator filters
Takahiro Nagafuku, Hiroyuki Deguchi, Mikio Tsuji (Doshisha Univ.), Hirotaka Fujita (SHARP)
pp. 17 - 21
MW2009-161
An All-Pass/Capacitive-Coupled BPF MMIC Phase Shifter
Ryota Komaru, Masatake Hangai, Koichi Shigenaga, Mamiko Yamaguchi, Morishige Hieda (Mitsubishi Electric Corp.)
pp. 23 - 27
MW2009-162
Novel Left-Handed Waveguides
Hiroaki Ikeuchi, Isao Ohta (Univ. of Hyogo), Mitsuyoshi Kishihara (Okayama Pre. Univ.), Tadashi Kawai (Univ. of Hyogo), Satoshi Matsumoto (Furuno Electric Co. Ltd.)
pp. 29 - 34
MW2009-163
Analytical and Experimental Considerations on Locking Characteristics of Band-stop Type of Self-injection Locked NRD Guide Gunn Oscillator at 60GHz
Koichi Oue, Futoshi Kuroki (Kure Nat'l Coll. of Tech.), Tsukasa Yoneyama (Tohoku Inst. of Tech.)
pp. 35 - 38
MW2009-164
InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric
Toru Kanazawa, Kazuya Wakabayashi, Hisashi Saito, Ryosuke Terao, Tomonori Tajima, Shunsuke Ikeda, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
pp. 39 - 42
MW2009-165
Deviation from Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density
Masayuki Yamada, Takafumi Uesawa, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)
pp. 43 - 48
MW2009-166
AlGaN/GaN HEMT having periodic mesa-gate structure
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
pp. 49 - 53
MW2009-167
[Invited Talk]
Development of high-performance ZnO-based FETs
-- Device applications and microwave performance --
Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.)
pp. 55 - 60
MW2009-168
Interface characterization of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures
Chihoko Mizue, Yujin Hori, Tamotsu Hashizume (Hokkaido Univ.)
pp. 61 - 64
MW2009-169
Analysis of Transient Response of HfO2/AlGaN/GaN MOSFETs
Yoshihisa Hayashi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.)
pp. 65 - 70
MW2009-170
Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers
Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.)
pp. 71 - 76
MW2009-171
AlGaN channel high electron mobility transistors on AlN substrates.
Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.)
pp. 77 - 80
MW2009-172
A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity
Kazuki Ota, Kazuomi Endo, Yasuhiro Okamoto, Yuji Ando, Hironobu Miyamoto, Hidenori Shimawaki (NEC Corp.)
pp. 81 - 85
MW2009-173
A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu)
pp. 87 - 92
MW2009-174
A 32-GS/s 6-bit Double-Sampling DAC in InP HBT Technology
Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.)
pp. 93 - 97
MW2009-175
Pseudo Sinusoidal Generator with PVT Compensation Circuit using InP HBTs
-- For Linear Control of Vector-Sum Phase Shifter --
Hideyuki Nosaka, Munehiko Nagatani, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.)
pp. 99 - 103
MW2009-176
A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications
Kazuya Yamamoto, Atsushi Okamura, Takayuki Matsuzuka, Yutaka Yoshii, Satoshi Suzuki, Masatoshi Nakayama, Teruyuki Shimura, Naohito Yoshida (Mitsubishi Electric Corp.)
pp. 105 - 110
MW2009-177
An X-band GaN HEMT T/R Switch with 50% Bandwidth
Masatake Hangai, Yukinobu Tarui, Yoshitaka Kamo, Morishige Hieda (Mitsubishi Electric Corp.)
pp. 111 - 115
MW2009-178
Cost Effective Wafer-Level Chip Size Package Technology and Application for High Speed Wireless Communications.
Seiji Fujita, Masaki Imagawa, Tomio Satoh (SEDI), Tsuneo Tokumitsu (SEI), Yuichi Hasegawa (SEDI)
pp. 117 - 121
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.