Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2012-128
[Invited Talk]
Ballistic transport and photovoltaic effect in graphene/h-BN
Tomoki Machida (Univ. of Tokyo/JST), Satoru Masubuchi, Masahiro Onuki, Kazuyuki Iguchi, Sei Morikawa, Takehiro Yamaguchi, Miho Arai (Univ. of Tokyo), Kenji Watanabe, Takashi Taniguchi (NIMS)
pp. 1 - 5
ED2012-129
Variation of Seebeck coefficient of Si-on-insulator layer induced by bias-injected carriers
Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./Research Fellow of JSPS)
pp. 7 - 11
ED2012-130
Fabrication of Cu2O/TiO2 heterojunction solar cells by electrochemical deposition and electrophoresis
Yoshihito Kato, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 13 - 17
ED2012-131
possibility of efficiency improvement of silicon solar cells due to defect-level introduction by ion implantation
Hiromu Sakakibara, Koji Wada, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.)
pp. 19 - 24
ED2012-132
Individual Dopant Nature in Si Lateral Nano-pn Junctions
Sri Purwiyanti, Arief Udhiarto (Shizuoka Univ./Univ. Indonesia), Roland Nowak (Shizuoka Univ./Warsaw Univ. of Tech.), Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Djoko Hartanto (Univ. Indonesia), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.)
pp. 25 - 30
ED2012-133
Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications
Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.)
pp. 31 - 34
ED2012-134
Fabrication of Graphene-based Three-branch Nano-junction (TBJ) and Its Application to Logic Circuits
Xiang Yin, Seiya Kasai (Hokkaido Univ.)
pp. 35 - 38
ED2012-135
Al2O3/InSb MOSFETs using an ultra thin InSb layer grown directly on a Si substrate
Koichi Maezawa, Taihei Ito, Azusa Kadoda, Koji Nakayama, Yuichiro Yasui, Masayuki Mori (Univ. of Toyama), Eiji Miyazaki, Takashi Mizutani (Nagoya Univ.)
pp. 39 - 42
ED2012-136
Field-Assisted Self -Assembly Process of InAs nanowires
Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.)
pp. 43 - 46
ED2012-137
Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature
Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo)
pp. 47 - 52
ED2012-138
Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ)
pp. 53 - 58
ED2012-139
Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices
Yoshinao Mizugaki (Univ. of Electro- Comm.)
pp. 59 - 64
ED2012-140
Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic SET with superconductive island
Masashi Takiguchi, Masataka Moriya, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro- Comm.)
pp. 65 - 70
ED2012-141
Surface Modification of Graphene by Scanning Probe Microscopy Scratch Nanolithography
Ryutaro Suda, Takanari Saito, Taku Yoshida (Tokyo Univ. of Agriculture and Tech.), Ampere A. Tseng (Arizona State Univ.), Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.)
pp. 71 - 76
ED2012-142
In-Situ Temperature Measurements of Joule-Heated Graphene Using Near-Infrared CCD Imaging System
Takanari Saito, Ibuki Atsumo, Ryutaro Suda, Mitsuki Ito, Jun-ichi Shirakashi (Tokyo Univ. of Agriculture and Tech.)
pp. 77 - 82
ED2012-143
Electrical Properties of Carbon Fibers Embedded with CNTs
Takehito Watanuki, Tomo Tanaka, Eiichi Sano, Bunshi Fugetsu (Hokkaido Univ.)
pp. 83 - 88
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.