Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2013-135
[Invited Talk]
Carrier response in band gap and multiband transport in bilayer grapheme under the ultra-high displacement
Kosuke Nagashio, K Kanayama, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo)
pp. 1 - 4
SDM2013-136
[Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side
ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo)
pp. 5 - 8
SDM2013-137
[Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST)
pp. 9 - 12
SDM2013-138
[Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs
Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST)
pp. 13 - 16
SDM2013-139
[Invited Talk]
Integration of III-V Nanowires on Si : From High-Performance Vertical FET to Steep-Slope Switch
Katsuhiro Tomioka (Hokkaido Univ./JST-PRESTO), Takashi Fukui (Hokkaido Univ.)
pp. 17 - 22
SDM2013-140
[Invited Talk]
Future Prospects of MRAM Technologies
Shinji Yuasa, Akio Fukushima, Kay Yakushiji, Takayuki Nozaki, Makoto Konoto, Hiroki Maehara, Hitoshi Kubota, Tomohiro Taniguchi, Hiroko Arai, Hiroshi Imamura, Koji Ando (AIST), Yoichi Shiota, Frederic Bonnel, Yoshishige Suzuki (Osaka Univ.), Naoharu Shimomura (Toshiba)
pp. 23 - 28
SDM2013-141
[Invited Talk]
Variable Nonvolatile Memory Arrays for Adaptive Computing Systems
Hiroki Noguchi, Susumu Takeda, Kumiko Nomura, Keiko Abe, Kazutaka Ikegami, Eiji Kitagawa, Naoharu Shimomura, Junichi Ito, Shinobu Fujita (Toshiba)
p. 29
SDM2013-142
[Invited Talk]
Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors
Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo)
pp. 31 - 34
SDM2013-143
[Invited Talk]
Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP)
pp. 35 - 38
SDM2013-144
[Invited Talk]
High Performance Sub-20-nm-Channel-Length Extremely-Thin Body InAs-on-Insulator Tri-Gate MOSFETs with High Short Channel Effect Immunity and Vth Tunability
S. H. Kim, Masafumi Yokoyama, Ryosho Nakane (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)
pp. 39 - 42
SDM2013-145
[Invited Talk]
3D Integrated CMOS Device by Using Wafer Stacking and Via-last TSV
Mayu Aoki, Futoshi Furuta, Kazuyuki Hozawa, Yuko Hanaoka, Kenichi Takeda (Hitachi)
pp. 43 - 46
SDM2013-146
[Invited Talk]
Three-dimensional Structures for High Saturation Signals and Crosstalk Suppression in 1.20 μm Pixel Back-Illuminated CMOS Image Sensor
Takekazu Shinohara, Kazufumi Watanabe (Sony Semiconductor), Kazunobu Ohta (Sony), Hajime Nakayama (Sony Semiconductor), Takafumi Morikawa (Sony), Keiichi Ohno, Dai Sugimoto (Sony Semiconductor), Shingo Kadomura, Teruo Hirayama (Sony)
pp. 47 - 50
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.