IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2015-11-05 - 2015-11-06 / Issue Date : 2015-10-29

SDM2015-84
[Invited Talk] Current Status of Impurity Diffusion Modeling in Semiconductors
Masashi Uematsu (Keio Univ.)
pp. 1 - 6

SDM2015-85
Impact of Deep P-Well Structure on Single Event Latchup in Bulk CMOS
Takashi Kato, Hideya Matsuyama (SNI)
pp. 7 - 11

SDM2015-86
Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation
Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.)
pp. 13 - 17

SDM2015-87
[Invited Talk] SISPAD 2015 Review
Hideki Minari (Sony)
pp. 19 - 22

SDM2015-88
[Invited Talk] Review of SISPAD2015
Tatsuya Kunikiyo (Renesas)
pp. 23 - 27

SDM2015-89
[Invited Talk] Simulation of Dirac Electron Engineering Device Using Strained Graphene
Satofumi Souma, Miku Tanaka, Keisuke Ichihara, Shotaro Sakoda, Kenji Sasaoka, Matsuto Ogawa (Kobe Univ.)
pp. 29 - 34

SDM2015-90
[Invited Talk] GaN-based devices on Si substrates for power conversion systems
Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic)
pp. 35 - 38

SDM2015-91
[Invited Talk] Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs
Atsushi Sakai, Katsumi Eikyu, Kenichiro Sonoda (REL), Kenichi Hisada, Koichi Arai, Yoichi Yamamoto (RSMC), Motoaki Tanizawa, Yasuo Yamaguchi (REL)
pp. 39 - 43

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan