Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2013] | [2014] | [2015] | [2016] | [2017] | [2018] | [2019] | [Japanese] / [English]
SDM2016-79
[Invited Talk]
SISPAD 2016 Review (1)
Kenichiro Sonoda (Renesas Electronics)
pp. 1 - 7
SDM2016-80
[Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)
Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi)
pp. 9 - 14
SDM2016-81
[Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era
Yasuhisa Omura (Kansai Univ.)
pp. 15 - 22
SDM2016-82
[Invited Talk]
Free carrier density dependent band gap and phonon frequency in germanium
Shoichi Kabuyanagi, Akira Toriumi (The Univ. of Tokyo)
pp. 23 - 26
SDM2016-83
[Invited Talk]
Simulation for Impact of ISFET Structure on Sensitivity
Kazuya Matsuzawa (Toshiba)
pp. 27 - 32
SDM2016-84
[Invited Talk]
Review of SISPAD 2016 (2)
Yoshinari Kamakura (Osaka Univ.)
pp. 33 - 36
SDM2016-85
[Invited Talk]
Simulation Studies Contributing to Development of Wide-Bandgap Power Semiconductor Devices
Kazuhiro Mochizuki (AIST)
pp. 37 - 42
SDM2016-86
[Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics --
Toshiaki Tsuchiya (Shimane Univ.)
pp. 43 - 47
SDM2016-87
[Invited Talk]
Application of DFT Calculation for the Development of High Quality Si and Ge Substrates
-- From Ultra Large Diameter Crystal Pulling to Metal Gettering --
Koji Sueoka (Okayama Pref. Univ.)
pp. 49 - 54
SDM2016-88
Self-Consistent Monte Carlo Device Simulations Under Double-Gate Device Structures
Hajime Sakamoto, Yasuaki Rokugo, Nobuyuki Sano (Tsukuba univ.)
pp. 55 - 58
SDM2016-89
Self-Consistent Device Simulation of a-Si p-i-n Solar Cells and Physical Mechanism of Capture and Emission Processes
Azuma Suzuki (Tsukuba Univ.), Katsuhisa Yoshida (Tokyo Univ.), Nobuyuki Sano (Tsukuba Univ.)
pp. 59 - 64
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.