IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 116, Number 448

Silicon Device and Materials

Workshop Date : 2017-01-30 / Issue Date : 2017-01-23

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Table of contents

SDM2016-130
[Invited Talk] Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology
Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST)
pp. 1 - 4

SDM2016-131
[Invited Talk] Tunneling MOSFET Technologies using III-V/Ge Materials
Shinichi Takagi, Daehwan Ahn, Munetaka Noguchi, Takahiro Gotow, Koichi Nishi, Min-Soo Kim, Mitsuru Takenaka (Univ. of Tokyo)
pp. 5 - 8

SDM2016-132
[Invited Talk] Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO2
Masaharu Kobayashi, , , (Univ. of Tokyo)
pp. 9 - 12

SDM2016-133
[Invited Talk] Fully Coupled 3-D Device Simulation of Negative Capacitance FinFETs for Sub 10 nm Integration
Hiroyuki Ota, Tsutomu Ikegami, Junichi Hattori, Koichi Fukuda, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo)
pp. 13 - 16

SDM2016-134
[Invited Talk] First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond
Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi)
pp. 17 - 20

SDM2016-135
[Invited Talk] Novel Voltage Controlled MRAM (VCM) with Fast Read/Write Circuits for Ultra Large Level Cache
Yoichi Shiota (AIST), Hiroki Noguchi, Kazutaka Ikegami, Keiko Abe, Shinobu Fujita (Toshiba), Takayuki Nozaki, Shinji Yuasa (AIST), Yoshishige Suzuki (Osaka Univ.)
pp. 21 - 24

SDM2016-136
[Invited Talk] Voltage-Control Spintronics Memory (VOCSM)Having Potentials of Ultra-Low Energy-Consumption and High-Density
Hiroaki Yoda, , , , , , , , , , , , , , (Toshiba)
pp. 25 - 28

SDM2016-137
[Invited Talk] General relationship for cation and anion doping effects on ferroelectric HfO2 formation
Xu Lun, Shibayama Shigehisa, Izukashi Kazutaka, Nishimura Tomonori, Yajima Takeaki (Univ. of Tokyo), Migita Shinji (AIST), Toriumi Akira (Univ. of Tokyo)
pp. 29 - 32

SDM2016-138
[Invited Talk] Novel Functional Passive Element for Future Analogue Signal Processing -- Fabrication and Application of the VO2 Volatile Switch --
Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo)
pp. 33 - 36

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan